Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N6772

2N6772

NPN POWER TRANSISTOR

536

ULN2004ANE4

ULN2004ANE4

Texas Instruments

ULN2004A HIGH-VOLTAGE, HIGH-CURR

0

ZXTP25100BFHTA

ZXTP25100BFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A SOT23-3

6927

SBCP53-16T1G

SBCP53-16T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

15205

2SB12200RL

2SB12200RL

Panasonic

TRANS PNP 150V 0.05A SMINI-3

3000

KSD1621UTF

KSD1621UTF

TRANS NPN 25V 2A SOT89-3

8000

BC857CE6327HTSA1

BC857CE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

49369

SMMBT2222ALT1G

SMMBT2222ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 600MA SOT23-3

1316

MJE521G

MJE521G

TRANS NPN 40V 4A TO225AA

3597

BCX71HE6327

BCX71HE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

1275000

TIP102

TIP102

STMicroelectronics

TRANS NPN DARL 100V 8A TO-220

1121

BC52-10PA,115

BC52-10PA,115

Nexperia

NOW NEXPERIA BC52-10PA - SMALL S

42000

PUMH13/ZL115

PUMH13/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

15000

MMBT2222A-ON

MMBT2222A-ON

1A, 40V, NPN, TO-236AA

579380

2SCR523UBTL

2SCR523UBTL

ROHM Semiconductor

TRANS NPN 50V 0.1A UMT3F

11306

BCW66HQTA

BCW66HQTA

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT23

0

KTC3198-GR A1G

KTC3198-GR A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 50V, 0.15A, 120

0

BC182AG

BC182AG

TRANS NPN 50V 100MA TO92-3

34995

BC817-25-F2-0000HF

BC817-25-F2-0000HF

NPN TRANS 45V 0.5A SOT-23-3L

0

CPH3245-TL-E

CPH3245-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 2A 3CPH

132012000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top