Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMBT4401K

MMBT4401K

TRANS NPN 40V 600MA SOT23-3

27668

PDTC114ET/YA215

PDTC114ET/YA215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

3132500

BCR129WH6327

BCR129WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

268000

BUJ103AX,127

BUJ103AX,127

NXP Semiconductors

NOW WEEN - BUJ103AX - POWER BIPO

10483

2SC4399-4-TL-E

2SC4399-4-TL-E

TRANSISTOR

165000

APT13003DZTR-G1

APT13003DZTR-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 1.5A TO92

0

NTE272

NTE272

NTE Electronics, Inc.

TRANS NPN 40V 2A TO202N

182

TIP122TU

TIP122TU

POWER BIPOLAR TRANSISTOR

42865

BCX70G,215

BCX70G,215

Nexperia

TRANS NPN 45V 100MA TO236AB

0

DSC2G02C0L

DSC2G02C0L

Panasonic

TRANS NPN 20V 0.015A MINI3

0

2N4403RLRPG

2N4403RLRPG

TRANS PNP 40V 600MA TO92-3

34000

2SC5001TLR

2SC5001TLR

ROHM Semiconductor

TRANS NPN 20V 10A SOT-428

3652

BDP948H6327XTSA1

BDP948H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 45V 3A SOT223

0

NTE176

NTE176

NTE Electronics, Inc.

T-PNP GE-AF PO

85

CMPT3820 TR PBFREE

CMPT3820 TR PBFREE

Central Semiconductor

TRANS NPN 80V 1A SOT23

10564000

BCW61C,215

BCW61C,215

Nexperia

NOW NEXPERIA BCW61C - SMALL SIGN

12538

2SAR514P5T100

2SAR514P5T100

ROHM Semiconductor

PNP -80V -0.7A MEDIUM POWER TRAN

1625

PMBT2907AMBYL

PMBT2907AMBYL

Nexperia

PMBT2907AMB/SOT883/XQFN3

10000

NSL12AWT1G

NSL12AWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 12V 2A SC88/SC70-6

44

2SA1790JCL

2SA1790JCL

Panasonic

TRANS PNP 20V 0.03A SSMINI-3

5422

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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