Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SB0709ASL

2SB0709ASL

Panasonic

TRANS PNP 45V 0.1A MINI 3P

3152

NSV1C201LT1G

NSV1C201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A SOT23-3

0

UML4NTR

UML4NTR

ROHM Semiconductor

TRANS PNP 12V 0.5A SOT353

0

BC846AMTF

BC846AMTF

0.1A, 65V, NPN

120923

SBCP56-10T1G

SBCP56-10T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A SOT-223

2147483647

2DC4617R-7-F

2DC4617R-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.15A SOT523

998957000

BC857BW,115

BC857BW,115

Nexperia

TRANS PNP 45V 100MA SOT323

307315

BCR133WH6327

BCR133WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

65595

2SC4449E-AA

2SC4449E-AA

Sanyo Denki SanUPS Products

NPN TRIPLE DIFFUSED PLANAR SIL

9000

NTE154

NTE154

NTE Electronics, Inc.

TRANS NPN 300V TO39

352

PDTB123EU115

PDTB123EU115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

145960

NTE197

NTE197

NTE Electronics, Inc.

TRANS PNP 70V 7A TO220

51

FZT692BTA

FZT692BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 70V 2A SOT-223

28893

NJVMJD122T4G-VF01

NJVMJD122T4G-VF01

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 8A DPAK

92

2SA1162GT1

2SA1162GT1

TRANS PNP 50V 150MA SC59

137980

NJVMJB45H11T4G

NJVMJB45H11T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 10A D2PAK

471600

NTE397

NTE397

NTE Electronics, Inc.

TRANS PNP 300V 1A TO39

65

KSP55TA

KSP55TA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 500MA TO92-3

9794

FZT869TA

FZT869TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 7A SOT-223

21759

BC806-25WF

BC806-25WF

Nexperia

BC806-25W/SOT323/SC-70

9809

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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