Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCX71JE6327

BCX71JE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

54500

2SC2413KT146Q

2SC2413KT146Q

ROHM Semiconductor

TRANS NPN 25V 0.05A SOT-346

3000

BCR192WH6327

BCR192WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

35965

APT13005SU-G1

APT13005SU-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 3.2A TO126

0

ZUMT720TA

ZUMT720TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.75A SC70-3

2

NSVT1418LT1G

NSVT1418LT1G

Sanyo Semiconductor/ON Semiconductor

PNP TRANSISTOR 160V

189000

2SC45620RL

2SC45620RL

Panasonic

TRANS NPN 50V 0.05A SMINI-3

8741

KSC2330YTA

KSC2330YTA

0.1A, 300V, NPN

19072

FMMT491-TP

FMMT491-TP

Micro Commercial Components (MCC)

NPNPLASTIC-ENCAPSULATETRANSISTOR

1606

2N2369A PBFREE

2N2369A PBFREE

Central Semiconductor

TRANS NPN 15V 0.2A TO-18

0

BF723,115

BF723,115

Nexperia

TRANS PNP 250V 100MA SOT223

45

SBC847CWT1G

SBC847CWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.1A SOT-323

639590000

2N1310

2N1310

Central Semiconductor

TRANS NPN 90V 0.2A TO5

0

JANTX2N2222A

JANTX2N2222A

Roving Networks / Microchip Technology

TRANS NPN 50V 0.8A TO18

0

2SA2125-TD-H

2SA2125-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A PCP

131462000

FMMTA56TA

FMMTA56TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 0.5A SOT23-3

300033000

PBSS4330X,135

PBSS4330X,135

Nexperia

TRANS NPN 30V 3A SOT89

0

ZXTP05120HFFTA

ZXTP05120HFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 120V 1A SOT23F-3

41625

MJE2955TG

MJE2955TG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 10A TO220AB

646

CENW92

CENW92

Central Semiconductor

TRANS PNP 300V 0.5A TO237

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top