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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
UPA811T-T1-A

UPA811T-T1-A

Renesas Electronics America

RF SMALL SIGNAL TRANSISTOR

18000
2SC5751-T2-A

2SC5751-T2-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

78000
2SC5455-T1-A

2SC5455-T1-A

Renesas Electronics America

2SC5455 - MD

210000
UPA810T-T1-A

UPA810T-T1-A

Renesas Electronics America

MOTION ENCODER

14287
2SC2620QCTR-E

2SC2620QCTR-E

Renesas Electronics America

RF SMALL SIGNAL BIPOLAR TRANSIST

52500
2SA1977-T1B-A

2SA1977-T1B-A

Renesas Electronics America

PNP TRANSISTOR

36965
2SC5752-T1-A

2SC5752-T1-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

24000
2SA1978-T1B-A

2SA1978-T1B-A

Renesas Electronics America

PNP TRANSISTOR

35960
2SC2620QBTR-E

2SC2620QBTR-E

Renesas Electronics America

RF SMALL SIGNAL BIPOLAR TRANSIST

4000
UPA895TS-T3-A

UPA895TS-T3-A

Renesas Electronics America

RF SMALL SIGNAL TRANSISTOR

10000
2SC4093-T1-A

2SC4093-T1-A

Renesas Electronics America

RF 0.1A, ULTRA HIGH FREQ BAND

71000
2SC5013-T1-A

2SC5013-T1-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

162000
2SC3583-T1B-A

2SC3583-T1B-A

Renesas Electronics America

2SC3583 - MD

129000
2SC3357-T1-A

2SC3357-T1-A

Renesas Electronics America

RF 0.1A, ULTRA HIGH FREQ BAND

17723
NESG2031M05-T1-A

NESG2031M05-T1-A

Renesas Electronics America

NESG2031 - NPN SIGE RF TRANSISTO

38528
NESG2021M16-T3-A

NESG2021M16-T3-A

Renesas Electronics America

RF SMALL SIGNAL TRANSISTOR

20000
HSG2001VF-01TL-E

HSG2001VF-01TL-E

Renesas Electronics America

NPN HIGH FREQPOWER AMP

468000
HSG1002VE-TL-E

HSG1002VE-TL-E

Renesas Electronics America

RF 0.035A C BAND GERMANIUM NPN

519687
NESG2101M05-T1-A

NESG2101M05-T1-A

Renesas Electronics America

NESG2101 - NPN SIGE RF TRANSISTO

9000
UPA901TU-T3-A

UPA901TU-T3-A

Renesas Electronics America

RF SMALL SIGNAL TRANSISTOR

30000

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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