HSG1002VE-TL-E

Manufacturer Part HSG1002VE-TL-E
Manufacturer Renesas Electronics America
Description RF 0.035A C BAND GERMANIUM NPN
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 519687 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):3.5V
Frequency - Transition:38GHz
Noise Figure (dB Typ @ f):0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain:8dB ~ 19.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 2V
Current - Collector (Ic) (Max):35mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:4-MFPAK
More Information
HSG1002VE-TL-E
HSG1002VE-TL-E
Renesas Electronics America HSG1002VE-TL-E is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
HSG1002VE-TL-E
HSG1002VE-TL-E
RF 0.035A C BAND GERMANIUM NPN
Renesas Electronics America
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