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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
AT-41532-TR1

AT-41532-TR1

Broadcom

RF TRANS NPN 12V SC70-3

0
AT-30533-TR2G

AT-30533-TR2G

Broadcom

RF TRANS NPN 5.5V SOT23

0
KSC1393YTA

KSC1393YTA

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 30V 700MHZ TO92-3

0
NE67718-T1-A

NE67718-T1-A

CEL (California Eastern Laboratories)

RF TRANS NPN 6V 15GHZ SOT343

0
NE68518-A

NE68518-A

CEL (California Eastern Laboratories)

RF TRANS NPN 6V 12GHZ SOT343

0
MPSH10RLRAG

MPSH10RLRAG

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 25V 650MHZ TO92-3

0
2SC5006-A

2SC5006-A

CEL (California Eastern Laboratories)

RF TRANS NPN 12V 4.5GHZ SOT523

0
2SC4627J0L

2SC4627J0L

Panasonic

RF TRANS NPN 20V 650MHZ SSMINI3

0
2SC24040CL

2SC24040CL

Panasonic

RF TRANS NPN 20V 650MHZ MINI3-G1

0
BFP460E6433HTMA1

BFP460E6433HTMA1

IR (Infineon Technologies)

RF TRANS NPN 5.8V 22GHZ SOT343-4

0
KSC2786RBU

KSC2786RBU

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 20V 600MHZ TO92S

0
BF199

BF199

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 25V 1.1GHZ TO92-3

0
BFP193WE6327HTSA1

BFP193WE6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT343-4

0
JAN2N2857

JAN2N2857

Microsemi

RF TRANS NPN 15V 500MHZ TO72

0
NE856M02-T1-AZ

NE856M02-T1-AZ

CEL (California Eastern Laboratories)

RF TRANS NPN 12V 6.5GHZ SOT89

200
NESG7030M04-A

NESG7030M04-A

CEL (California Eastern Laboratories)

RF TRANS NPN 4.3V 5.8GHZ M04

0
2N3866A TIN/LEAD

2N3866A TIN/LEAD

Central Semiconductor

RF TRANS NPN 30V 400MHZ TO39

0
NE46234-T1-SE-AZ

NE46234-T1-SE-AZ

CEL (California Eastern Laboratories)

RF TRANS NPN 12V 6GHZ SOT89

0
BFR 181W E6327

BFR 181W E6327

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT323-3

0
NE68530-A

NE68530-A

CEL (California Eastern Laboratories)

RF TRANS NPN 6V 12GHZ SOT323

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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