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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
2SC5338-T1-AZ

2SC5338-T1-AZ

CEL (California Eastern Laboratories)

RF TRANS NPN 12V 6GHZ SOT89

0
NE68133-A

NE68133-A

CEL (California Eastern Laboratories)

RF TRANS NPN 10V 9GHZ SOT23

0
MRF4427GR2

MRF4427GR2

Microsemi

RF TRANS NPN 20V 8SO

0
NE68019-T1

NE68019-T1

CEL (California Eastern Laboratories)

RF TRANS NPN 10V 10GHZ SOT523

0
MRF10350

MRF10350

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V 355E-01

1080
BFP650

BFP650

IR (Infineon Technologies)

RF TRANS NPN 4.5V 37GHZ SOT343-4

0
60180

60180

Microsemi

RF POWER TRANSISTOR

0
2SC5096-R,LF

2SC5096-R,LF

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 10V 10GHZ SSM

0
2SC5551AF-TD-E

2SC5551AF-TD-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 30V 3.5GHZ PCP

0
BFG520,215

BFG520,215

NXP Semiconductors

RF TRANS NPN 15V 9GHZ SOT143B

0
MPSH10_D75Z

MPSH10_D75Z

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 25V 650MHZ TO92-3

0
BFR 193W E6327

BFR 193W E6327

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT323-3

0
NE68039-A

NE68039-A

CEL (California Eastern Laboratories)

RF TRANS NPN 10V 10GHZ SOT143

0
KSC2786RTA

KSC2786RTA

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 20V 600MHZ TO92S

0
MSC3930-BT1G

MSC3930-BT1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 20V 150MHZ SC70-3

0
2SC5754-A

2SC5754-A

CEL (California Eastern Laboratories)

RF TRANS NPN 5V 20GHZ SOT343F

0
ZTX325

ZTX325

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ E-LINE

0
BFR505T,115

BFR505T,115

NXP Semiconductors

RF TRANS NPN 15V 9GHZ SC75

0
BFP540FESDE6327

BFP540FESDE6327

IR (Infineon Technologies)

RF TRANS NPN 5V 30GHZ 4TSFP

0
NE68033-A

NE68033-A

CEL (California Eastern Laboratories)

RF TRANS NPN 10V 10GHZ SOT23

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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