Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
XP0121700L

XP0121700L

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

0

XP0338300L

XP0338300L

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

0

XP0121L00L

XP0121L00L

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

0

NP0G3A000A

NP0G3A000A

Panasonic

TRANS PREBIAS NPN/PNP SSSMINI6

0

XP0438700L

XP0438700L

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

0

XP0431600L

XP0431600L

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

0

XP0111500L

XP0111500L

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

0

XN0621300L

XN0621300L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

0

UP01214G0L

UP01214G0L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

0

XN0121E00L

XN0121E00L

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

0

UP0431500L

UP0431500L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

0

XN0111H00L

XN0111H00L

Panasonic

TRANS PREBIAS DUAL PNP MINI5

0

UP0411200L

UP0411200L

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

0

XP0621400L

XP0621400L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

0

NP0G3D300A

NP0G3D300A

Panasonic

TRANS PREBIAS NPN/PNP SSSMINI6

0

XN0431600L

XN0431600L

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

0

DMC5610M0R

DMC5610M0R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

0

XP0121200L

XP0121200L

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

0

XP0421M00L

XP0421M00L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

0

NP0H3A300A

NP0H3A300A

Panasonic

TRANS PREBIAS NPN/PNP SSSMINI6

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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