Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMB1,115

PUMB1,115

Nexperia

TRANSISTORS>100MHZ

39550

NHUMB2F

NHUMB2F

Nexperia

NHUMB2/SOT363/SC-88

10000

NHUMD3F

NHUMD3F

Nexperia

NHUMD3/SOT363/SC-88

10000

NHUMD9X

NHUMD9X

Nexperia

NHUMD9/SOT363/SC-88

3000

PUMD20,115

PUMD20,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

PEMH13,115

PEMH13,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

146

PUMD3,165

PUMD3,165

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

8246

PBLS6022D,115

PBLS6022D,115

Nexperia

NOW NEXPERIA PBLS6022D - SMALL S

223760

PUMD10,135

PUMD10,135

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

7586

PUMB10,115

PUMB10,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

5078

PEMH9,315

PEMH9,315

Nexperia

TRANS 2NPN PREBIAS 0.3W SOT666

0

PUMH19,115

PUMH19,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

0

PEMB19,115

PEMB19,115

Nexperia

NOW NEXPERIA PEMB19 - SMALL SIGN

20000

PUMD6/ZLX

PUMD6/ZLX

Nexperia

PUMD6 - UPN/PNP RESISTOR-EQUIPPE

21000

NHUMH13X

NHUMH13X

Nexperia

NHUMH13/SOT363/SC-88

2900

PEMH10,115

PEMH10,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

22649

PBLS2003D,115

PBLS2003D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

0

PEMB3,115

PEMB3,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

NHUMD9F

NHUMD9F

Nexperia

NHUMD9/SOT363/SC-88

9996

PEMD14,115

PEMD14,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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