Thyristors - TRIACs

Part Number	Description / PDF	Quantity
QJ6008DH2RP Wickmann / Littelfuse	HT ALTNSTR 600V 8A 10-10-10 MA T	0
Q4015LTHTP Wickmann / Littelfuse	QDRC ALT 400V 15A 33/43V TO220 I	495
Q6010LTHTP Wickmann / Littelfuse	QDRC ALT 600V 10A 33/43V TO220 I	0
QJ8040JH7TP Wickmann / Littelfuse	TRIAC 800V 40A TO-218X	344
Q8010L4TP Wickmann / Littelfuse	TRIAC 800V 10A 25-25-25 MA TO220	0
QJ4025LH6TP Wickmann / Littelfuse	ALTERNISTOR TRIAC 25A TO220AB	0
L6006L5TP Wickmann / Littelfuse	SEN TRIAC 600V 6A 5-5-5-5 MA TO2	0
QJ4004V4TP Wickmann / Littelfuse	TRIAC 4A 400V TO-251 V-PAK	0
Q4040K5TP Wickmann / Littelfuse	ALTSTR 400V 40A 50-50-50MA TO218	0
QJ6008VH2TP Wickmann / Littelfuse	HT ALTNSTR 600V 8A 10-10-10 MA T	0
L4006L8TP Wickmann / Littelfuse	SENTRIAC 400V 6A 10-10-10-20MA T	0
QK025L5TP Wickmann / Littelfuse	TRIAC 1000V 25A TO220L	0
QJ6030LH4TP Wickmann / Littelfuse	TRIAC 600V 30A TO-220L	990
Q4025LH5TP Wickmann / Littelfuse	ALTNSTR 400V 25A 50-50-50 MA TO2	0
Q8040K3TP Wickmann / Littelfuse	TRIAC 800V 40A 35-35-35-70MA TO-	0
Q8012LH2TP Wickmann / Littelfuse	ALTNSTR 800V 12A 10-10-10 MA TO2	0
CMA60MT1600NHB Wickmann / Littelfuse	POWER THYRISTOR DISCRETES-TRIAC	0
QK010LH5TP Wickmann / Littelfuse	ALTNSTR 1000V 10A 50-50-50 MA TO	0
QK040K4TP Wickmann / Littelfuse	TRIAC 1000V 40A TO218AC	0
QJ6040KH6TP Wickmann / Littelfuse	TRIAC 600V 40A TO-218AC	0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard TRIAC	General-purpose with moderate gate sensitivity	Light dimmers, heater controls
Sensitive Gate TRIAC	Low gate trigger current ( 5mA)	Microcontroller-driven circuits
Logic Level TRIAC	Compatible with 3.3V/5V logic signals	Smart home automation systems
High dv/dt TRIAC	Enhanced immunity to voltage spikes	Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

Dielectric passivation layers for voltage stability
Aluminum gate metallization
Epitaxial silicon wafers with precise doping profiles
Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter	Description	Typical Range
Breakover Voltage (VBO)	Minimum voltage to initiate conduction	200-1200V
Gate Trigger Current (IGT)	Required gate current for turn-on	5-50mA
Holding Current (IH)	Minimum current to maintain conduction	5-50mA
RMS On-State Current (IT(RMS))	Continuous load current capacity	0.5-50A
dv/dt Rating	Voltage change immunity	10-50V/ s

5. Application Fields

Consumer Electronics: Smart lighting systems, washing machine water level controls
Industrial Automation: AC motor speed controllers, solid-state relays
Power Systems: Voltage regulators, reactive power compensators
Automotive: Electric vehicle charging circuits, HVAC controls
Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Parameters
STMicroelectronics	BT136-600E	600V, 4A, 10mA IGT
ON Semiconductor	Q6015LH	600V, 15A, 15mA IGT
Infineon Technologies	BTA16-600B	600V, 16A, 50mA IGT
Microsemi	MAC97A8	600V, 8A, 5mA IGT

7. Selection Guidelines

Verify VBO exceeds maximum circuit voltage by 20%
IT(RMS) should be 1.5 load current
Match IGT with driver circuit capability
Consider heatsinking requirements
Select dv/dt rating based on load inductance
Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

Integration with SiC/GaN for higher efficiency
Smart packaging with built-in temperature sensors
Miniaturization for space-constrained applications
Improved immunity to electromagnetic interference
AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.