Thyristors - TRIACs

Part Number	Description / PDF	Quantity
QJ6008VH3TP Wickmann / Littelfuse	TRIAC ALT 8A 600V TO-251 V-PAK	0
Q8010LH5TP Wickmann / Littelfuse	ALTNSTR 800V 10A 50-50-50 MA TO2	0
QK010L4TP Wickmann / Littelfuse	TRIAC 1000V 10A 25-25-25 MA TO22	0
LJ6004V8TP Wickmann / Littelfuse	TRIAC 4A 600V TO-251 V-PAK	0
Q4025L5TP Wickmann / Littelfuse	TRIAC 400V 25A TO220L	0
CMA80MT1600NHR Wickmann / Littelfuse	POWER THYRISTOR DISC-TRIAC ISOPL	0
Q6006LTHTP Wickmann / Littelfuse	QDRC ALT 600V 6A 33/43V TO220 IS	0
L6004L8TP Wickmann / Littelfuse	SENTRIAC 600V 4A 10-10-10-20MA T	0
Q6040K4TP Wickmann / Littelfuse	STANDARD TRIAC 600V 40A TO218 IS	0
QJ8040K3TP Wickmann / Littelfuse	TRIAC 800V 40A TO-218AC	342
QJ6040JH6TP Wickmann / Littelfuse	TRIAC 600V 40A TO-218X	0
QK015L5TP Wickmann / Littelfuse	TRIAC 1000V 15A 50-50-50 MA TO22	0
QJ8040JH6TP Wickmann / Littelfuse	TRIAC 800V 40A TO-218X	0
L4004L8TP Wickmann / Littelfuse	SENTRIAC 400V 4A 10-10-10-20MA T	0
QK004L4TP Wickmann / Littelfuse	TRIAC 1000V 4A 25-25-25 MA TO220	0
Q6010LTTP Wickmann / Littelfuse	QDRC 600V 10A 33/43V TO220 ISO	0
CLA60MT1200NHR Wickmann / Littelfuse	POWER THYRISTOR DISC-TRIAC ISOPL	0
Q4016LH4TP Wickmann / Littelfuse	ALTNSTR 400V 16A 35-35-35 MA TO2	0
QJ6040KH7TP Wickmann / Littelfuse	TRIAC 600V 40A TO-218AC	337
QK006L5TP Wickmann / Littelfuse	TRIAC 1000V 6A 50-50-50 MA TO220	0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard TRIAC	General-purpose with moderate gate sensitivity	Light dimmers, heater controls
Sensitive Gate TRIAC	Low gate trigger current ( 5mA)	Microcontroller-driven circuits
Logic Level TRIAC	Compatible with 3.3V/5V logic signals	Smart home automation systems
High dv/dt TRIAC	Enhanced immunity to voltage spikes	Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

Dielectric passivation layers for voltage stability
Aluminum gate metallization
Epitaxial silicon wafers with precise doping profiles
Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter	Description	Typical Range
Breakover Voltage (VBO)	Minimum voltage to initiate conduction	200-1200V
Gate Trigger Current (IGT)	Required gate current for turn-on	5-50mA
Holding Current (IH)	Minimum current to maintain conduction	5-50mA
RMS On-State Current (IT(RMS))	Continuous load current capacity	0.5-50A
dv/dt Rating	Voltage change immunity	10-50V/ s

5. Application Fields

Consumer Electronics: Smart lighting systems, washing machine water level controls
Industrial Automation: AC motor speed controllers, solid-state relays
Power Systems: Voltage regulators, reactive power compensators
Automotive: Electric vehicle charging circuits, HVAC controls
Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Parameters
STMicroelectronics	BT136-600E	600V, 4A, 10mA IGT
ON Semiconductor	Q6015LH	600V, 15A, 15mA IGT
Infineon Technologies	BTA16-600B	600V, 16A, 50mA IGT
Microsemi	MAC97A8	600V, 8A, 5mA IGT

7. Selection Guidelines

Verify VBO exceeds maximum circuit voltage by 20%
IT(RMS) should be 1.5 load current
Match IGT with driver circuit capability
Consider heatsinking requirements
Select dv/dt rating based on load inductance
Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

Integration with SiC/GaN for higher efficiency
Smart packaging with built-in temperature sensors
Miniaturization for space-constrained applications
Improved immunity to electromagnetic interference
AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.