Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
BTB10-600BWRG

BTB10-600BWRG

STMicroelectronics

TRIAC ALTERNISTOR 600V TO220AB

4578

BTA420X-800CT,127

BTA420X-800CT,127

NXP Semiconductors

NOW WEEN - BTA420X-800CT - 3 QUA

9286

BTA308X-800F0Q

BTA308X-800F0Q

WeEn Semiconductors Co., Ltd

BTA308X-800F0 TO-220F STANDARD

0

BT136-800E,127

BT136-800E,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BT136-800E - 4 QUADRA

0

Q6008DH3TP

Q6008DH3TP

Wickmann / Littelfuse

TRIAC ALTERNISTOR 600V 8A TO252

0

ACST8-8CG-TR

ACST8-8CG-TR

STMicroelectronics

TRIAC 800V 8A D2PAK

0

BT138-600E/DGQ

BT138-600E/DGQ

WeEn Semiconductors Co., Ltd

TRIAC SENS GATE 600V 12A TO220F

0

Q4X8E4

Q4X8E4

Wickmann / Littelfuse

TRIAC 400V 0.8A TO92

0

BTA316X-800B/L01127

BTA316X-800B/L01127

NXP Semiconductors

3 QUADRANT TRIAC TO 220F

1200

BT137X-600/DG,127

BT137X-600/DG,127

WeEn Semiconductors Co., Ltd

TRIAC 600V 8A TO220F

105

Q4010RH5TP

Q4010RH5TP

Wickmann / Littelfuse

ALTNSTR 400V 10A 50-50-50 MA TO2

0

BT137X-600/L02Q

BT137X-600/L02Q

WeEn Semiconductors Co., Ltd

TRIAC 600V 8A

0

ACTT12-800CTQ

ACTT12-800CTQ

WeEn Semiconductors Co., Ltd

ACTT12-800CT/SIL3P/STANDARD MA

0

BT138X-800F,127

BT138X-800F,127

WeEn Semiconductors Co., Ltd

TRIAC 800V 12A TO220-3

0

T1235H-6T

T1235H-6T

STMicroelectronics

TRIAC ALTERNISTOR 600V TO220AB

0

BTA26-700BRG

BTA26-700BRG

STMicroelectronics

TRIAC 700V 25A TOP3

331

ACST1235-7G

ACST1235-7G

STMicroelectronics

TRIAC 700V 12A D2PAK

0

ACS108-6SA

ACS108-6SA

STMicroelectronics

TRIAC SENS GATE 600V 0.45A TO92

4411

BTA212-600B,127

BTA212-600B,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BTA212-600B - 3 QUADR

3800

BT134-800E,127

BT134-800E,127

NXP Semiconductors

NOW WEEN - BT134-800E - 4 QUADRA

0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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