Thyristors - TRIACs

Image Part Number Description / PDF Quantity Rfq
Q4006VH4TP

Q4006VH4TP

Wickmann / Littelfuse

TRIAC ALTERNISTOR 400V 6A TO251

0

BTA412Y-600C,127

BTA412Y-600C,127

WeEn Semiconductors Co., Ltd

TRIAC 600V 12A TO220AB

4970

BTA20-700BWRG

BTA20-700BWRG

STMicroelectronics

TRIAC ALTERNISTOR 700V TO220AB

965

NTE5606

NTE5606

NTE Electronics, Inc.

TRIAC-500VRM 4A

134

MAC228A4G

MAC228A4G

4 QUADRANT LOGIC LEVEL TRIAC, 20

11800

TMA106S-L

TMA106S-L

Sanken Electric Co., Ltd.

TRIAC 600V 10A

0

BTA2008-600E,412

BTA2008-600E,412

NXP Semiconductors

NOW WEEN - BTA2008-600E - 3 QUAD

6000

QK004D4RP

QK004D4RP

Wickmann / Littelfuse

TRIAC 1KV 4A TO252

0

MAC223A6FP

MAC223A6FP

THYRISTOR TRIAC 400V 250A

12649

BTA316B-800C,118

BTA316B-800C,118

WeEn Semiconductors Co., Ltd

TRIAC 800V 16A D2PAK

0

T1635T-8FP

T1635T-8FP

STMicroelectronics

TRIAC ALTERNISTOR 800V TO220FPAB

206

BTA140-600,127

BTA140-600,127

WeEn Semiconductors Co., Ltd

TRIAC 600V 25A TO220AB

10

MAC12HCM

MAC12HCM

TRIAC, 600V, 12A, TO-220AB

23243

ACS108-6SA-AP

ACS108-6SA-AP

STMicroelectronics

TRIAC SENS GATE 600V 0.45A TO92

0

Q8012NH2TP

Q8012NH2TP

Wickmann / Littelfuse

TRIAC ALTERNISTOR 800V 12A TO2

0

BTA12-600CWRG

BTA12-600CWRG

STMicroelectronics

TRIAC ALTERNISTOR 600V TO220AB

22670

QK004D4TP

QK004D4TP

Wickmann / Littelfuse

TRIAC 1KV 4A TO252

0

2N6073BG

2N6073BG

Wickmann / Littelfuse

TRIAC SENS GATE 400V 4A TO225AA

9489

SST138C-800E

SST138C-800E

SMC Diode Solutions

800V 12A PACKAGE TO-220C 4-QUADR

0

L4N5RP

L4N5RP

Wickmann / Littelfuse

TRIAC SENS GATE 400V 1A DO214

0

Thyristors - TRIACs

1. Overview

TRIAC (Triode for Alternating Current) is a three-terminal semiconductor device belonging to the thyristor family. It enables bidirectional current flow control in AC circuits through a single gate terminal. As a key component in power electronics, TRIACs are widely used for phase control, switching, and regulation of AC loads. Their ability to conduct current in both directions makes them ideal for applications requiring full-wave control, such as dimmers and motor speed regulators.

2. Main Types and Functional Classification

Type Functional Characteristics Application Examples
Standard TRIAC General-purpose with moderate gate sensitivity Light dimmers, heater controls
Sensitive Gate TRIAC Low gate trigger current ( 5mA) Microcontroller-driven circuits
Logic Level TRIAC Compatible with 3.3V/5V logic signals Smart home automation systems
High dv/dt TRIAC Enhanced immunity to voltage spikes Industrial motor drives

3. Structure and Composition

TRIACs feature a four-layer (PNPN) silicon structure with three electrodes: Main Terminal 1 (MT1), Main Terminal 2 (MT2), and Gate (G). The symmetrical design allows bidirectional conduction. Modern TRIACs incorporate:

  • Dielectric passivation layers for voltage stability
  • Aluminum gate metallization
  • Epitaxial silicon wafers with precise doping profiles
  • Plastic encapsulation (TO-220/TO-92 packages)

4. Key Technical Parameters

Parameter Description Typical Range
Breakover Voltage (VBO) Minimum voltage to initiate conduction 200-1200V
Gate Trigger Current (IGT) Required gate current for turn-on 5-50mA
Holding Current (IH) Minimum current to maintain conduction 5-50mA
RMS On-State Current (IT(RMS)) Continuous load current capacity 0.5-50A
dv/dt Rating Voltage change immunity 10-50V/ s

5. Application Fields

  • Consumer Electronics: Smart lighting systems, washing machine water level controls
  • Industrial Automation: AC motor speed controllers, solid-state relays
  • Power Systems: Voltage regulators, reactive power compensators
  • Automotive: Electric vehicle charging circuits, HVAC controls
  • Renewable Energy: Solar inverter AC switching circuits

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Parameters
STMicroelectronics BT136-600E 600V, 4A, 10mA IGT
ON Semiconductor Q6015LH 600V, 15A, 15mA IGT
Infineon Technologies BTA16-600B 600V, 16A, 50mA IGT
Microsemi MAC97A8 600V, 8A, 5mA IGT

7. Selection Guidelines

  1. Verify VBO exceeds maximum circuit voltage by 20%
  2. IT(RMS) should be 1.5 load current
  3. Match IGT with driver circuit capability
  4. Consider heatsinking requirements
  5. Select dv/dt rating based on load inductance
  6. Use zero-crossing detection for EMI-sensitive applications

8. Industry Trends

Key development trends include:

  • Integration with SiC/GaN for higher efficiency
  • Smart packaging with built-in temperature sensors
  • Miniaturization for space-constrained applications
  • Improved immunity to electromagnetic interference
  • AI-driven predictive maintenance in industrial systems

Market growth is driven by smart grid implementations and EV charging infrastructure expansion, with a projected CAGR of 6.8% through 2030.

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