Thyristors - DIACs, SIDACs

Image Part Number Description / PDF Quantity Rfq
K2000F1

K2000F1

Wickmann / Littelfuse

SIDAC 190-215V 1A TO92

0

HT5761

HT5761

Wickmann / Littelfuse

DIAC 28-36V 2A DO35

0

K1400S

K1400S

Wickmann / Littelfuse

SIDAC 130-146V 1A DO214

0

LIC01-195H

LIC01-195H

STMicroelectronics

DIAC 195-230V 1.2A IPAK

0

HT60RP

HT60RP

Wickmann / Littelfuse

DIAC 56-70V 1.5A DO35

0

ST36ARP

ST36ARP

Wickmann / Littelfuse

DIAC 32-40V 2A DO214

0

HT5761ARP

HT5761ARP

Wickmann / Littelfuse

DIAC 30-34V 2A DO35

0

MA2B00100F

MA2B00100F

Panasonic

DIAC 28-36V 2A DO35

0

K0900S

K0900S

Wickmann / Littelfuse

SIDAC 79-97V 1A DO214

0

ST32

ST32

Wickmann / Littelfuse

DIAC 27-37V 2A DO214

0

K3000F1

K3000F1

Wickmann / Littelfuse

SIDAC 270-330V 1A TO202

0

HT40RP

HT40RP

Wickmann / Littelfuse

DIAC 35-45V 2A DO35

0

K2000F23

K2000F23

Wickmann / Littelfuse

SIDAC 190-215V 1A TO202

0

HT5761RP

HT5761RP

Wickmann / Littelfuse

DIAC 28-36V 2A DO35

0

ST34BRP

ST34BRP

Wickmann / Littelfuse

DIAC 32-36V 2A DO214

0

HT35RP

HT35RP

Wickmann / Littelfuse

DIAC 30-40V 2A DO35

0

MKP1V160

MKP1V160

Sanyo Semiconductor/ON Semiconductor

SIDAC 150-170V 900MA AXIAL

0

BR100/03,113

BR100/03,113

NXP Semiconductors

DIAC 28-36V 2A ALF2

0

ST40

ST40

Wickmann / Littelfuse

DIAC 35-45V 2A DO214

0

K1300S

K1300S

Wickmann / Littelfuse

SIDAC 120-138V 1A DO214

0

Thyristors - DIACs, SIDACs

1. Overview

DIACs (Diodes for Alternating Current) and SIDACs (Silicon Diodes for Alternating Current) are bidirectional trigger devices used primarily to control thyristor-based circuits. These three-layer semiconductor devices exhibit negative resistance characteristics and are critical in AC power control systems. They enable precise switching of high-voltage AC loads through their unique breakover voltage behavior, making them essential in lighting, motor control, and industrial automation applications.

2. Main Types and Functional Classification

Type Functionality Application Examples
DIAC Low-power bidirectional trigger diode with symmetrical breakover voltage TRIAC gate triggering in dimmer switches
SIDAC Higher current/voltage capability with precise voltage clamping Industrial motor speed controllers
Programmable DIAC Voltage-adjustable triggering through external resistors Customizable power control systems

3. Structure and Composition

DIACs/SIDACs typically consist of a four-layer (PNPN) silicon structure with two main terminals (A1/A2). The symmetrical doping profile creates a negative resistance region during reverse bias. Advanced devices incorporate:

  • Epitaxial silicon layers for precise voltage control
  • Passivation layers for voltage stability
  • Metallization patterns for thermal management
  • Plastic/ceramic packaging for environmental protection

4. Key Technical Specifications

Parameter Description Importance
Breakover Voltage (VBO) Voltage threshold for conduction (typically 20-32V) Determines triggering point
Trigger Current (IT) Minimum current to sustain conduction Impacts load compatibility
Holding Current (IH) Current level to maintain on-state Affects circuit stability
Peak Current (IPT) Maximum transient current capability Overload protection
dv/dt Voltage change rate immunity Prevents false triggering

5. Application Areas

Key industries and equipment:

  • Lighting: Smart dimming systems, LED drivers
  • Industrial: Conveyor belt controllers, heating systems
  • Consumer: Washing machine motor controls
  • Power Electronics: AC voltage regulators

Example: DIACs in phase-control dimmers trigger TRIACs at specific AC cycle points to adjust light intensity.

6. Leading Manufacturers and Products

Manufacturer Product Series Key Features
STMicroelectronics DB3 Standard DIAC with 32V VBO
ON Semiconductor SIDAC103 100V, 3A industrial SIDAC
Vishay TECC94 High surge current capability

7. Selection Guidelines

Key considerations:

  1. Match VBO to TRIAC gate requirements
  2. Verify current ratings with load characteristics
  3. Choose packaging based on thermal needs
  4. Consider dv/dt ratings for noisy environments
  5. Evaluate temperature stability for industrial applications

8. Industry Trends

Emerging developments:

  • Integration with wide-bandgap semiconductors (SiC/GaN)
  • Miniaturization for PCB space optimization
  • Improved dv/dt immunity for EV charging systems
  • Smart grid compatibility with IoT-enabled controllers

Market growth driven by energy-efficient lighting and industrial automation demands.

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