Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZX79-C12,113

BZX79-C12,113

Nexperia

DIODE ZENER 12V 400MW ALF2

19928

NZX18C,133

NZX18C,133

Nexperia

DIODE ZENER 18V 500MW ALF2

0

BZX585-C9V1,135

BZX585-C9V1,135

Nexperia

DIODE ZENER 9.1V 300MW SOD523

0

BZX384-B3V3F

BZX384-B3V3F

Nexperia

DIODE ZENER 3.3V SOD323

0

PZU18B1,115

PZU18B1,115

Nexperia

DIODE ZENER 18V 310MW SOD323F

0

BZT52-C7V5J

BZT52-C7V5J

Nexperia

DIODE ZENER 7.45V 350MW SOD123

19493

BZX79-B13,143

BZX79-B13,143

Nexperia

DIODE ZENER 13V 400MW ALF2

2374

BZX884-B75,315

BZX884-B75,315

Nexperia

DIODE ZENER 75V 250MW DFN1006-2

244532

PZU15B,115

PZU15B,115

Nexperia

DIODE ZENER 15V 310MW SOD323F

67327

BZX384-C39,115

BZX384-C39,115

Nexperia

DIODE ZENER 39V 300MW SOD323

3240

NZX20B,133

NZX20B,133

Nexperia

DIODE ZENER 20V 500MW ALF2

0

BZV49-C16,115

BZV49-C16,115

Nexperia

DIODE ZENER 16V 1W SOT89

835

NZX3V3A,133

NZX3V3A,133

Nexperia

DIODE ZENER 3.3V 500MW ALF2

10006

BZT52-C33J

BZT52-C33J

Nexperia

DIODE ZENER 33V 350MW SOD123

8290

BZX884-B9V1,315

BZX884-B9V1,315

Nexperia

DIODE ZENER 9.1V 250MW DFN1006-2

8910

PDZ5.6BGWX

PDZ5.6BGWX

Nexperia

DIODE ZENER 5.6V 365MW SOD123

4696

BZT52-B47X

BZT52-B47X

Nexperia

DIODE ZENER 47V 590MW SOD123

0

NZX30A,133

NZX30A,133

Nexperia

DIODE ZENER 30V 500MW ALF2

0

BZV85-C27,133

BZV85-C27,133

Nexperia

DIODE ZENER 27V 1W DO41

3243

BZT52-B10J

BZT52-B10J

Nexperia

DIODE ZENER 10V 590MW SOD123

6306

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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