Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
NZH18C,115

NZH18C,115

Nexperia

DIODE ZENER 18V 500MW SOD123F

2512

BZX84W-C10X

BZX84W-C10X

Nexperia

DIODE ZENER 10V 275MW SOT323

2440

NZX14B,133

NZX14B,133

Nexperia

DIODE ZENER 14V 500MW ALF2

277682

BZV49-C7V5,115

BZV49-C7V5,115

Nexperia

DIODE ZENER 7.5V 1W SOT89

1867

PDZ12BGWX

PDZ12BGWX

Nexperia

DIODE ZENER 12V 365MW SOD123

1763

BZX84W-B30F

BZX84W-B30F

Nexperia

DIODE ZENER 30V 275MW SOT323

9898

BZX84J-C51,115

BZX84J-C51,115

Nexperia

DIODE ZENER 51V 550MW SOD323F

0

BZX84W-B3V9F

BZX84W-B3V9F

Nexperia

DIODE ZENER 3.9V 275MW SOT323

9875

BZX585-B24,115

BZX585-B24,115

Nexperia

DIODE ZENER 24V 300MW SOD523

105000

NZH3V6B,115

NZH3V6B,115

Nexperia

DIODE ZENER 3.6V 500MW SOD123F

834

PDZ22BZ

PDZ22BZ

Nexperia

DIODE ZENER 22.47V 400MW SOD323

29875

BZX84W-B3V3X

BZX84W-B3V3X

Nexperia

DIODE ZENER 3.3V 275MW SOT323

0

PZU11B1A,115

PZU11B1A,115

Nexperia

DIODE ZENER 11V 320MW SOD323

2965

PDZ9.1BGWX

PDZ9.1BGWX

Nexperia

DIODE ZENER 9.1V 365MW SOD123

0

BZX884-C68,315

BZX884-C68,315

Nexperia

DIODE ZENER 68V 250MW DFN1006-2

103186

BZX384-C16F

BZX384-C16F

Nexperia

DIODE ZENER 16V SOD323

0

BZV49-C22,115

BZV49-C22,115

Nexperia

DIODE ZENER 22V 1W SOT89

1000

BZX384-C10,115

BZX384-C10,115

Nexperia

DIODE ZENER 10V 300MW SOD323

0

BZV55-C6V2,115

BZV55-C6V2,115

Nexperia

DIODE ZENER 6.2V 500MW LLDS

1640

BZX84W-C47X

BZX84W-C47X

Nexperia

DIODE ZENER 47V 275MW SOT323

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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