Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
M3Z62VB

M3Z62VB

Rectron USA

DIODE ZENER 62V 200MW SOD-323F

0

MMSZ5251BS

MMSZ5251BS

Rectron USA

DIODE ZENER 22V 500MW SOD-323

0

MM5Z47B

MM5Z47B

Rectron USA

DIODE ZENER 47V 500MW SOD-523

0

1SMAF4735A

1SMAF4735A

Rectron USA

DIODE ZENER 6.2V 1W SMAF

0

DL4744A-T

DL4744A-T

Rectron USA

DIODE ZENER 13V 1W MELF

0

SMB5364B

SMB5364B

Rectron USA

DIODE ZENER 33V 5W SMB

0

BZD27C3V6P

BZD27C3V6P

Rectron USA

DIODE ZENER 3.6V 800MW SOD-123F

0

1SMB5954B

1SMB5954B

Rectron USA

DIODE ZENER 160V 3W SMB

0

BZD27C3V9P

BZD27C3V9P

Rectron USA

DIODE ZENER 3.9V 800MW SOD-123F

0

Z330

Z330

Rectron USA

DIODE ZENER 330V 1W DO-41

0

ZMM5261B

ZMM5261B

Rectron USA

DIODE ZENER 47V 500MW LL-34

0

1SMB5920B

1SMB5920B

Rectron USA

DIODE ZENER 6.2V 3W SMB

0

1SMAF4751A

1SMAF4751A

Rectron USA

DIODE ZENER 30V 1W SMAF

0

Z120

Z120

Rectron USA

DIODE ZENER 120V 1W DO-41

0

M3Z4V7B

M3Z4V7B

Rectron USA

DIODE ZENER 4.7V 200MW SOD-323F

0

DL4733A-T

DL4733A-T

Rectron USA

DIODE ZENER 5.1V 1W MELF

0

BZX984C8V2

BZX984C8V2

Rectron USA

DIODE ZENER 8.2V 150MW SOD-923

0

BZV55C 24BSB

BZV55C 24BSB

Rectron USA

DIODE ZENER 24V 500MW LL-34

0

BZX984C6V2

BZX984C6V2

Rectron USA

DIODE ZENER 6.2V 150MW SOD-923

0

MMSZ4698

MMSZ4698

Rectron USA

DIODE ZENER 11V 500MW SOD-123

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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