Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
SMA5925A

SMA5925A

Rectron USA

DIODE ZENER 10V 1W SMA

0

BZX84B68

BZX84B68

Rectron USA

DIODE ZENER 68V 350MW SOT-23

0

1SMB5934B

1SMB5934B

Rectron USA

DIODE ZENER 24V 3W SMB

0

BZM55B27

BZM55B27

Rectron USA

ZENER 27V 500MW MICRO-MELF

0

BZT52B9V1S

BZT52B9V1S

Rectron USA

DIODE ZENER 9.1V 500MW SOD-323

0

BZX984B16

BZX984B16

Rectron USA

DIODE ZENER 16V 150MW SOD-923

0

SMA5954A

SMA5954A

Rectron USA

DIODE ZENER 160V 1W SMA

0

ZMM5246B

ZMM5246B

Rectron USA

DIO ZENER GLASS 16V 500MW LL-34

0

1SMB5922B

1SMB5922B

Rectron USA

DIODE ZENER 7.5V 3W SMB

0

MMBZ5241BW

MMBZ5241BW

Rectron USA

DIODE ZENER 11V 200MW SOT-323

0

BZM55C6.8BSB

BZM55C6.8BSB

Rectron USA

DIODE ZENER 6.8V 500MW LS-31

0

BZT52B10S

BZT52B10S

Rectron USA

DIODE ZENER 10V 500MW SOD-323

0

BZT52C2V4S

BZT52C2V4S

Rectron USA

DIODE ZENER 2.4V 200MW SOD-323

0

Z150

Z150

Rectron USA

DIODE ZENER 150V 1W DO-41

0

BZX584B11

BZX584B11

Rectron USA

DIODE ZENER 11V 200MW SOD-523

0

1SMA5926B

1SMA5926B

Rectron USA

DIODE ZENER 11V 1.5W SMA

0

1SMAF4767A

1SMAF4767A

Rectron USA

DIODE ZENER 135V 1W SMAF

0

BZM55B56

BZM55B56

Rectron USA

ZENER 56V 500MW MICRO-MELF

0

MM5Z2V2B

MM5Z2V2B

Rectron USA

DIODE ZENER 2.2V 500MW SOD-523

0

BZX984C3V0

BZX984C3V0

Rectron USA

DIODE ZENER 3V 150MW SOD-923

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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