Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZX984C2V7

BZX984C2V7

Rectron USA

DIODE ZENER 2.7V 150MW SOD-923

0

BZV55C 7.5BSC

BZV55C 7.5BSC

Rectron USA

DIODE ZENER 7.5V 500MW LL-34

0

SMA5931A

SMA5931A

Rectron USA

DIODE ZENER 18V 1W SMA

0

1SMAF4757A

1SMAF4757A

Rectron USA

DIODE ZENER 51V 1W SMAF

0

MMSZ5242BS

MMSZ5242BS

Rectron USA

DIODE ZENER 12V 500MW SOD-323

0

BZM55C4.7BSB

BZM55C4.7BSB

Rectron USA

DIODE ZENER 4.7V 500MW LS-31

0

Z240A

Z240A

Rectron USA

DIODE ZENER 240V 1W DO-41

0

Z140

Z140

Rectron USA

DIODE ZENER 140V 1W DO-41

0

MMBZ5225B

MMBZ5225B

Rectron USA

DIODE ZENER 3V 300MW SOT-23

0

SMA5937A

SMA5937A

Rectron USA

DIODE ZENER 33V 1W SMA

0

MMSZ4712

MMSZ4712

Rectron USA

DIODE ZENER 28V 500MW SOD-123

0

1SMB5947B

1SMB5947B

Rectron USA

DIODE ZENER 82V 3W SMB

0

BZT52B18S

BZT52B18S

Rectron USA

DIODE ZENER 18V 500MW SOD-323

0

SMA3Z91A

SMA3Z91A

Rectron USA

DIODE ZENER 91V 3W SMA

0

DL4757A

DL4757A

Rectron USA

DIODE ZENER 51V 1W LL-41

0

1SMAF4761A

1SMAF4761A

Rectron USA

DIODE ZENER 75V 1W SMAF

0

FM4745W

FM4745W

Rectron USA

DIODE ZENER GLASS 16V 1W SMA

0

1SMAF4739A

1SMAF4739A

Rectron USA

DIODE ZENER 9.1V 1W SMAF

0

BZX85C47-T-M

BZX85C47-T-M

Rectron USA

DIODE ZENER 47V 1.3W DO-41

0

MMBZ5251BW

MMBZ5251BW

Rectron USA

DIODE ZENER 22V 200MW SOT-323

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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