Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
MMSZ4686T

MMSZ4686T

Rectron USA

DIODE ZENER 3.9V 300MW SOD-523

0

MM5Z9V1B

MM5Z9V1B

Rectron USA

DIODE ZENER 9.1V 500MW SOD-523

0

BZD27C110P

BZD27C110P

Rectron USA

DIODE ZENER 110V 800MW SOD-123F

0

BZX85C20-T-M

BZX85C20-T-M

Rectron USA

DIODE ZENER 20V 1.3W DO-41

0

MMSZ5239BS

MMSZ5239BS

Rectron USA

DIODE ZENER 9.1V 500MW SOD-323

0

DL4752A

DL4752A

Rectron USA

DIODE ZENER 33V 1W LL-41

0

1SMAF2EZ4.3

1SMAF2EZ4.3

Rectron USA

DIODE ZENER 4.3V 2W SMAF

0

1SMAF4748A

1SMAF4748A

Rectron USA

DIODE ZENER 22V 1W SMAF

0

FM4761W

FM4761W

Rectron USA

DIODE ZENER GLASS 75V 1W SMA

0

BZX84C3V3W

BZX84C3V3W

Rectron USA

DIODE ZENER 3.3V 200MW SOT-323

0

1SMA5956B

1SMA5956B

Rectron USA

DIODE ZENER 200V 1.5W SMA

0

Z170

Z170

Rectron USA

DIODE ZENER 170V 1W DO-41

0

BZM55C8.2BS

BZM55C8.2BS

Rectron USA

DIODE ZENER 8.2V 500MW LS-31

0

BZD27C120P

BZD27C120P

Rectron USA

DIODE ZENER 120V 800MW SOD-123F

0

MMSZ5223B

MMSZ5223B

Rectron USA

DIODE ZENER 2.7V 500MW SOD-123

0

1SMAF2EZ170

1SMAF2EZ170

Rectron USA

DIODE ZENER 170V 2W SMAF

0

MMSZ4699

MMSZ4699

Rectron USA

DIODE ZENER 12V 500MW SOD-123

0

MMSZ5226BS

MMSZ5226BS

Rectron USA

DIODE ZENER 3.3V 500MW SOD-323

0

BZT52B2V4

BZT52B2V4

Rectron USA

DIODE ZENER 2.4V 500MW SOD-123

0

BZX584B33

BZX584B33

Rectron USA

DIODE ZENER 33V 200MW SOD-523

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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