Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
1N6001C

1N6001C

Roving Networks / Microchip Technology

DIODE ZENER 11V 500MW DO35

0

NTE5022A

NTE5022A

NTE Electronics, Inc.

DIODE ZENER 13V 500 MV DO35

653

1N5921AP/TR8

1N5921AP/TR8

Roving Networks / Microchip Technology

DIODE ZENER 6.8V 1.5W DO204AL

0

BZT52C27-G3-08

BZT52C27-G3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 27V 410MW SOD123

0

TZM5249B-GS08

TZM5249B-GS08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 19V 500MW SOD80

8858

TZX4V7A-TR

TZX4V7A-TR

Vishay General Semiconductor – Diodes Division

DIODE ZENER 4.7V 500MW DO35

0

JANTXV1N3031CUR-1

JANTXV1N3031CUR-1

Roving Networks / Microchip Technology

DIODE ZENER 30V 1W DO213AB

0

MMSZ4685-G3-18

MMSZ4685-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.6V 500MW SOD123

0

1PMT4120C/TR7

1PMT4120C/TR7

Roving Networks / Microchip Technology

DIODE ZENER 30V 1W DO216

0

PZU4.3B3,115

PZU4.3B3,115

Nexperia

DIODE ZENER 4.3V 310MW SOD323F

0

GDZ12B-E3-18

GDZ12B-E3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 12V 200MW SOD323

0

MMBZ5228C-G3-18

MMBZ5228C-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.9V 225MW SOT23-3

0

BZX84W-C7V5X

BZX84W-C7V5X

Nexperia

DIODE ZENER 7.5V 275MW SOT323

2995

MMBZ5234BLT1

MMBZ5234BLT1

DIODE ZENER 6.2V 225MW SOT23-3

150400

BZX84C11W-TP

BZX84C11W-TP

Micro Commercial Components (MCC)

DIODE ZENER 11V 200MW SOT323

0

BZX384C62-E3-18

BZX384C62-E3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 62V 200MW SOD323

0

CDLL5914C

CDLL5914C

Roving Networks / Microchip Technology

DIODE ZENER 3.6V 1.25W DO213AB

0

1N6009C

1N6009C

Roving Networks / Microchip Technology

DIODE ZENER 24V 500MW DO35

0

SZ-10NN27VL

SZ-10NN27VL

Sanken Electric Co., Ltd.

DIODE ZENER 27V 6W SZ10

750

1N5228C-TAP

1N5228C-TAP

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.9V 500MW DO35

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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