Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
SMBJ5366B/TR13

SMBJ5366B/TR13

Roving Networks / Microchip Technology

DIODE ZENER 39V 5W SMBJ

0

TZQ5250B-GS18

TZQ5250B-GS18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 20V 500MW SOD80

0

1N4754G R0G

1N4754G R0G

TSC (Taiwan Semiconductor)

DIODE ZENER 39V 1W DO204AL

0

1N4758PE3/TR12

1N4758PE3/TR12

Roving Networks / Microchip Technology

DIODE ZENER 56V 1W DO204AL

0

CZRB3200-G

CZRB3200-G

Comchip Technology

DIODE ZENER 200V 3W DO214AA

0

BZX585B33 RSG

BZX585B33 RSG

TSC (Taiwan Semiconductor)

DIODE ZENER 33V 200MW SOD523F

0

BZD27C7V5P-M3-08

BZD27C7V5P-M3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 7.5V 800MW DO219AB

0

BZD27C100P-M-18

BZD27C100P-M-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 100V 800MW DO219AB

0

ACZRT55C6V2-G

ACZRT55C6V2-G

Comchip Technology

DIODE ZENER 6.2V 350MW SOT23

23693000

KDZTR4.3B

KDZTR4.3B

ROHM Semiconductor

DIODE ZENER 4.6V 1W PMDU

0

SMBJ4743/TR13

SMBJ4743/TR13

Roving Networks / Microchip Technology

DIODE ZENER 13V 2W SMBJ

0

MMBZ5236B-HE3-08

MMBZ5236B-HE3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 7.5V 225MW SOT23-3

0

1N5925CPE3/TR8

1N5925CPE3/TR8

Roving Networks / Microchip Technology

DIODE ZENER 10V 1.5W DO204AL

0

BZD27C220P RVG

BZD27C220P RVG

TSC (Taiwan Semiconductor)

DIODE ZENER 220.5V 1W SUB SMA

0

1N5943P/TR12

1N5943P/TR12

Roving Networks / Microchip Technology

DIODE ZENER 56V 1.5W DO204AL

0

BZD27C6V2P-M3-08

BZD27C6V2P-M3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 6.2V 800MW DO219AB

2728

SMBJ5921B/TR13

SMBJ5921B/TR13

Roving Networks / Microchip Technology

DIODE ZENER 6.8V 2W SMBJ

0

MMBZ4627-G3-18

MMBZ4627-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 6.2V 350MW SOT23-3

0

1SMA5931HM2G

1SMA5931HM2G

TSC (Taiwan Semiconductor)

DIODE ZENER 18V 1.5W DO214AC

0

1PMT5928E3/TR13

1PMT5928E3/TR13

Roving Networks / Microchip Technology

DIODE ZENER 13V 3W DO216AA

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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