Diodes - Zener - Arrays

Image Part Number Description / PDF Quantity Rfq
UMZ5.1NT106

UMZ5.1NT106

ROHM Semiconductor

DIODE ZENER ARRAY 5.1V UMD3

79

UMZ5.6KFHTL

UMZ5.6KFHTL

ROHM Semiconductor

ZENER DIODE (AEC-Q101 QUALIFIED)

0

EMZ6.8ET2R

EMZ6.8ET2R

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V EMD5

5629

VMZT6.8NT2L

VMZT6.8NT2L

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V VMD3

10156

UMZ16NFHT106

UMZ16NFHT106

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

3000

UMZ27NT106

UMZ27NT106

ROHM Semiconductor

DIODE ZENER ARRAY 27V 200MW UMD3

2740

UMZ16NT106

UMZ16NT106

ROHM Semiconductor

DIODE ZENER ARRAY 16V 200MW UMD3

1143

STZ5.6NT146

STZ5.6NT146

ROHM Semiconductor

DIODE ZENER ARRAY 5.6V SMD3

2963

STZ6.8TFHT146

STZ6.8TFHT146

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

3000

UMZ6.8NT106

UMZ6.8NT106

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V UMD3

2890

FTZ6.8ET148

FTZ6.8ET148

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V SMD5

0

UMZ22KFHTL

UMZ22KFHTL

ROHM Semiconductor

ZENER DIODES

3000

UMZ8.2NFHT106

UMZ8.2NFHT106

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

2990

UMZ30KFHTL

UMZ30KFHTL

ROHM Semiconductor

ZENER DIODES

0

UMZ18KFHTL

UMZ18KFHTL

ROHM Semiconductor

ZENER DIODES

2950

STZ6.2NT146

STZ6.2NT146

ROHM Semiconductor

DIODE ZENER ARRAY 6.2V SMD3

0

STZ6.8NT146

STZ6.8NT146

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V SMD3

5564

UMZ5.1NFHT106

UMZ5.1NFHT106

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

2890

FTZ30ET148

FTZ30ET148

ROHM Semiconductor

DIODE ZENER ARRAY 30V 200MW SMD5

0

FTZ4.3ET148

FTZ4.3ET148

ROHM Semiconductor

DIODE ZENER ARRAY 4.3V SMD5

0

Diodes - Zener - Arrays

1. Overview

Zener diode arrays are discrete semiconductor devices integrating multiple Zener diodes in a single package. They leverage the Zener breakdown effect to provide precise voltage regulation, overvoltage protection, and reference voltage generation. These arrays are critical in modern electronics for ensuring circuit stability, protecting sensitive components from voltage spikes, and enabling compact PCB designs. Their importance spans industries like automotive, telecommunications, and industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional Zener ArraysSingle-direction voltage clampingESD protection in data lines
Bidirectional Zener ArraysDouble-sided voltage regulationAC voltage stabilization circuits
Multi-Voltage ArraysMultiple Zener diodes with different VzPower supply sequencing
Low-Leakage ArraysMinimized reverse leakage currentBattery-powered devices

3. Structure and Composition

Zener arrays consist of silicon semiconductor substrates with precisely doped P-N junctions. The die structure includes:

  • Doped regions creating tailored breakdown voltages
  • Metallic contacts for anode/cathode connections
  • Passivation layers preventing surface leakage
  • Thermal management structures (e.g., heat spreaders)
Common packaging types include SOIC, TSSOP, and DIP formats with standardized pinouts.

4. Key Technical Specifications

ParameterDescriptionTypical Range
Zener Voltage (Vz)Voltage regulation setpoint2.4V - 200V
Power Dissipation (Pd)Maximum thermal energy handling100mW - 5W
Zener Current (Iz)Operating current range1mA - 100mA
Dynamic Impedance (Zz)Voltage variation under load1 - 50
Temperature CoefficientVoltage stability vs temperature 0.05%/ C

5. Application Fields

Key industries utilizing Zener arrays include:

  • Telecommunications: Line protection for transceivers
  • Automotive: ECU voltage stabilization
  • Industrial Control: Sensor signal conditioning
  • Consumer Electronics: Power management circuits
Typical devices: SMPS converters, IoT sensors, motor controllers.

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorNUP41066-channel ESD protection array
STMicroelectronicsSMF48A48V bidirectional protection
NXP SemiconductorsPESD1CANAutomotive CAN bus protection
Texas InstrumentsZHCS100Ultra-low leakage voltage reference

7. Selection Guidelines

Key selection criteria:

  • Match Vz to target regulation voltage ( 5% tolerance)
  • Verify Pd rating exceeds maximum power dissipation
  • Consider package thermal resistance
  • Select appropriate leakage current level
  • For arrays: Ensure channel independence and crosstalk specifications
Application Case: In automotive ECU design, NXP PESD1CAN selected for its AEC-Q100 qualification and 40kV ESD robustness.

8. Industry Trends

Emerging trends include:

  • Miniaturization: 0.4mm pitch WLCSP packages
  • Integration with TVS diodes for hybrid protection
  • Wide bandgap materials (SiC) for higher Vz stability
  • Automotive-grade arrays supporting 48V systems
  • RoHS-compliant packaging materials
Market demand driven by 5G infrastructure and EV battery management systems.

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