Diodes - Zener - Arrays

Image Part Number Description / PDF Quantity Rfq
UMZ27NFHT106

UMZ27NFHT106

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

2980

VMZ6.8NT2L

VMZ6.8NT2L

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V VMD3

18

UMZ16KFHTL

UMZ16KFHTL

ROHM Semiconductor

ZENER DIODES

3000

UMZ8.2TT106

UMZ8.2TT106

ROHM Semiconductor

DIODE ZENER ARRAY 8.2V UMD3

2872

FTZ5.6ET148

FTZ5.6ET148

ROHM Semiconductor

DIODE ZENER ARRAY 5.6V SMD5

5492

EMZ6.8NTL

EMZ6.8NTL

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V EMD3

1518

UMZ8.2TFHT106

UMZ8.2TFHT106

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

3000

UMZ33KFHTL

UMZ33KFHTL

ROHM Semiconductor

ZENER DIODES

3000

UMZ12KTL

UMZ12KTL

ROHM Semiconductor

DIODE ZENER ARRAY 12V 200MW UMD4

300

UMZ4.7KFHTL

UMZ4.7KFHTL

ROHM Semiconductor

ZENER DIODES

0

UMZ36NT106

UMZ36NT106

ROHM Semiconductor

DIODE ZENER ARRAY 36V 200MW UMD3

450

UMZ6.8ENTR

UMZ6.8ENTR

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V UMD5

49

UMZ18NFHT106

UMZ18NFHT106

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

3000

UMZ12NT106

UMZ12NT106

ROHM Semiconductor

DIODE ZENER ARRAY 12V 200MW UMD3

3769

UMZ18NT106

UMZ18NT106

ROHM Semiconductor

DIODE ZENER ARRAY 18V 200MW UMD3

4

STZ6.8TT146

STZ6.8TT146

ROHM Semiconductor

DIODE ZENER ARRAY 6.8V SMD3

1826

UMZ5.1KFHTL

UMZ5.1KFHTL

ROHM Semiconductor

ZENER DIODE (AEC-Q101 QUALIFIED)

0

UMZ6.8KFHTL

UMZ6.8KFHTL

ROHM Semiconductor

ZENER DIODE (AEC-Q101 QUALIFIED)

0

UMZ8.2NT106

UMZ8.2NT106

ROHM Semiconductor

DIODE ZENER ARRAY 8.2V UMD3

0

STZ6.2NFHT146

STZ6.2NFHT146

ROHM Semiconductor

ZENER ARRAYS FOR TERMINAL PROTEC

1175

Diodes - Zener - Arrays

1. Overview

Zener diode arrays are discrete semiconductor devices integrating multiple Zener diodes in a single package. They leverage the Zener breakdown effect to provide precise voltage regulation, overvoltage protection, and reference voltage generation. These arrays are critical in modern electronics for ensuring circuit stability, protecting sensitive components from voltage spikes, and enabling compact PCB designs. Their importance spans industries like automotive, telecommunications, and industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional Zener ArraysSingle-direction voltage clampingESD protection in data lines
Bidirectional Zener ArraysDouble-sided voltage regulationAC voltage stabilization circuits
Multi-Voltage ArraysMultiple Zener diodes with different VzPower supply sequencing
Low-Leakage ArraysMinimized reverse leakage currentBattery-powered devices

3. Structure and Composition

Zener arrays consist of silicon semiconductor substrates with precisely doped P-N junctions. The die structure includes:

  • Doped regions creating tailored breakdown voltages
  • Metallic contacts for anode/cathode connections
  • Passivation layers preventing surface leakage
  • Thermal management structures (e.g., heat spreaders)
Common packaging types include SOIC, TSSOP, and DIP formats with standardized pinouts.

4. Key Technical Specifications

ParameterDescriptionTypical Range
Zener Voltage (Vz)Voltage regulation setpoint2.4V - 200V
Power Dissipation (Pd)Maximum thermal energy handling100mW - 5W
Zener Current (Iz)Operating current range1mA - 100mA
Dynamic Impedance (Zz)Voltage variation under load1 - 50
Temperature CoefficientVoltage stability vs temperature 0.05%/ C

5. Application Fields

Key industries utilizing Zener arrays include:

  • Telecommunications: Line protection for transceivers
  • Automotive: ECU voltage stabilization
  • Industrial Control: Sensor signal conditioning
  • Consumer Electronics: Power management circuits
Typical devices: SMPS converters, IoT sensors, motor controllers.

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorNUP41066-channel ESD protection array
STMicroelectronicsSMF48A48V bidirectional protection
NXP SemiconductorsPESD1CANAutomotive CAN bus protection
Texas InstrumentsZHCS100Ultra-low leakage voltage reference

7. Selection Guidelines

Key selection criteria:

  • Match Vz to target regulation voltage ( 5% tolerance)
  • Verify Pd rating exceeds maximum power dissipation
  • Consider package thermal resistance
  • Select appropriate leakage current level
  • For arrays: Ensure channel independence and crosstalk specifications
Application Case: In automotive ECU design, NXP PESD1CAN selected for its AEC-Q100 qualification and 40kV ESD robustness.

8. Industry Trends

Emerging trends include:

  • Miniaturization: 0.4mm pitch WLCSP packages
  • Integration with TVS diodes for hybrid protection
  • Wide bandgap materials (SiC) for higher Vz stability
  • Automotive-grade arrays supporting 48V systems
  • RoHS-compliant packaging materials
Market demand driven by 5G infrastructure and EV battery management systems.

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