Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
BB175X

BB175X

NXP Semiconductors

DIODE VHF VAR CAP 32V SOD523

6773

MAVR-000409-0287FT

MAVR-000409-0287FT

Metelics (MACOM Technology Solutions)

VARACTOR,LEAD-FREE,CK, PLASTIC

0

BB135,135

BB135,135

NXP Semiconductors

DIODE UHF VAR CAP 30V SOD323

0

SMV1470-004LF

SMV1470-004LF

Skyworks Solutions, Inc.

DIODE VARACTOR

482424000

SMV1763-040LF

SMV1763-040LF

Skyworks Solutions, Inc.

DIODE VARACTOR

558015000

BB202LX,315

BB202LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

0

BB664H7902

BB664H7902

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

16750

MAVR-001340-1146FT

MAVR-001340-1146FT

Metelics (MACOM Technology Solutions)

VARACTOR,PLASTIC,LEAD-FREE,DUAL,

2737

SVC203C-TD-E

SVC203C-TD-E

Sanyo Denki SanUPS Products

DIFFUSED JUNCTION TYPE SILICON V

2243

SMV1265-040LF

SMV1265-040LF

Skyworks Solutions, Inc.

DIODE VARACTOR

219342000

BB669E7904HTSA1

BB669E7904HTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

1008000

MA46483-186

MA46483-186

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,HYPER,DUAL,STRIPL

50

MAVR-045448-0287AT

MAVR-045448-0287AT

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,ABRUPT,SINGLE,PLA

52553000

BB659CH7902

BB659CH7902

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

MA46470-134

MA46470-134

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR, HYPERABRUPT,GAAS

300

BBY53-05WH6327

BBY53-05WH6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

1750

BB804SF1E6327

BB804SF1E6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

SVC233-TB-E

SVC233-TB-E

Sanyo Denki SanUPS Products

VARIABLE-CAPACITANCE DIODE (IOCA

3001

BBY6605WE6327

BBY6605WE6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

37834

MMVL409T1G

MMVL409T1G

VARIABLE CAPACITANCE DIODE

10750

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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