Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
SMV1263-074LF

SMV1263-074LF

Skyworks Solutions, Inc.

DIODE VARACTOR

240012000

MA27V1500L

MA27V1500L

Panasonic

DIODE VARIABLE CAP 6V SSS-MINI

341

MA46H203-1056

MA46H203-1056

Metelics (MACOM Technology Solutions)

DIODE VARACTOR DUAL GAAS

197

MMVL3102T1G

MMVL3102T1G

VARIABLE CAPACITANCE DIODE

12000

KVX2162-23-0

KVX2162-23-0

Roving Networks / Microchip Technology

SI TVAR NON HERMETIC PLASTIC SMT

141

SMVA1248-079LF

SMVA1248-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR

39000

SVC270-TL-E

SVC270-TL-E

DIFFUSED JUNCTION TYPE SILICON V

141000

BBY5806WE6327

BBY5806WE6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

9000

KVX3901A-23-0

KVX3901A-23-0

Roving Networks / Microchip Technology

SI TVAR NON HERMETIC PLASTIC SMT

187

GCX1210-23-4

GCX1210-23-4

Roving Networks / Microchip Technology

SI TVAR NON HERMETIC PLASTIC SMT

0

MA46H201-1056

MA46H201-1056

Metelics (MACOM Technology Solutions)

DIODE VARACTOR DUAL GAAS

100

MA27V0200L

MA27V0200L

Panasonic

DIODE VARIABLE CAP 6V SSS-MINI

18462

SMV1249-079LF

SMV1249-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR 15V 20MA SC-79

2147483647

BBY5303WE6327HTSA1

BBY5303WE6327HTSA1

IR (Infineon Technologies)

DIODE VARACTOR 6V SGL SOD323-2

6000

MA4ST1241-1141T

MA4ST1241-1141T

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,SI PLASTIC PB-FRE

300024000

SVC230-TB-E

SVC230-TB-E

VARIABLE CAPACITANCE DIODE

54155

SMV1281-079LF

SMV1281-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR

13465

BB804SF2E6327HTSA1

BB804SF2E6327HTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

663000

SMV1234-040LF

SMV1234-040LF

Skyworks Solutions, Inc.

DIODE VARACTOR 15V 20MA 0402

24000

1SV279,H3F

1SV279,H3F

Toshiba Electronic Devices and Storage Corporation

PB-F ESC VARICAP DIODE (HF), IR=

0

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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