Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
MA26V0400A

MA26V0400A

Panasonic

DIODE VARIABLE CAP 6V 1006

9796

BB555H7902

BB555H7902

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

BB181,115

BB181,115

NXP Semiconductors

DIODE VHF VAR CAP 30V SOD523

5305

1SV304TPH3F

1SV304TPH3F

Toshiba Electronic Devices and Storage Corporation

DIODE VARACTOR 10V USC

1822

MAVR-000250-11410T

MAVR-000250-11410T

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,PB-FREE MA4ST250

3000

BB814E6327GR1HTSA1

BB814E6327GR1HTSA1

IR (Infineon Technologies)

DIODE VAR CAP 18V 50MA SOT-23

19218

KVX2201-23-0

KVX2201-23-0

Roving Networks / Microchip Technology

SI TVAR NON HERMETIC PLASTIC SMT

0

BB173115

BB173115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

215999

MMVL535T1

MMVL535T1

VARIABLE CAPACITANCE DIODE

29575

BBY5202WH6327XTSA1

BBY5202WH6327XTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

SMV2019-079LF

SMV2019-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR 22V 20MA SC79

982912000

MV2111

MV2111

DIODE VAR CAP SINGLE 30V 42.3PF

4000

BB837E6327HTSA1

BB837E6327HTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

9000

BB914E6327HTSA1

BB914E6327HTSA1

IR (Infineon Technologies)

DIODE VARACTOR 18V DUAL SOT23-3

4614

BB207,215

BB207,215

NXP Semiconductors

DIODE FM VAR CAP 15V SOT-23

521

BBY5602VH6327XTSA1

BBY5602VH6327XTSA1

IR (Infineon Technologies)

DIODE TUNING 2SC79

1961

BBY58-03WE6327

BBY58-03WE6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

MV2109RLRA

MV2109RLRA

VARIABLE CAPACITANCE DIODE

2000

BB208-03,135

BB208-03,135

NXP Semiconductors

DIODE VAR CAP 10V 20MA SOD323

0

SMV1231-040LF

SMV1231-040LF

Skyworks Solutions, Inc.

DIODE VARACTOR

2147483647

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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