Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
BB171X

BB171X

NXP Semiconductors

BB171 - VHF VARIABLE CAPACITANCE

16888

MA46H073-1056

MA46H073-1056

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,CHIP,GAAS

97

BB804SF2E6327

BB804SF2E6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

72930

SVC203SPA

SVC203SPA

VARIABLE CAPACITANCE DIODE

180999

SMV1405-079LF

SMV1405-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR 30V 20MA SC-79

770636000

BBY5502VH6327XTSA1

BBY5502VH6327XTSA1

IR (Infineon Technologies)

DIODE VARACTOR 16V SGL SC79-2

11900

MA26V1100A

MA26V1100A

Panasonic

DIODE VARIABLE CAP 8V 1006

9649

MV2105G

MV2105G

VARIABLE CAPACITANCE DIODE

9000

HVU202BTRU-E

HVU202BTRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

189000

BB174X

BB174X

NXP Semiconductors

DIODE VHF VAR CAP 30V SOD523

14722

BB535E7908

BB535E7908

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

54000

BB833E6327HTSA1

BB833E6327HTSA1

IR (Infineon Technologies)

BB833 - VARIABLE CAPACITANCE DIO

69209

BBY5102VH6327XTSA1

BBY5102VH6327XTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

411295

BBY5305WH6327XTSA1

BBY5305WH6327XTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

3000

BB68902VH7902XTSA1

BB68902VH7902XTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

KVX2301-23-0

KVX2301-23-0

Roving Networks / Microchip Technology

SI TVAR NON HERMETIC PLASTIC SMT

126

SMV2023-011LF

SMV2023-011LF

Skyworks Solutions, Inc.

VARACTOR

45000

1SV239TPH3F

1SV239TPH3F

Toshiba Electronic Devices and Storage Corporation

DIODE VARACTOR 15V USC

11459

BB149A,115

BB149A,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

0

SMV1232-079LF

SMV1232-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR 15V 20MA SC-79

21644

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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