Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAR 50-02L E6327

BAR 50-02L E6327

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW TSLP-2

0

BAT 68-07W E6327

BAT 68-07W E6327

IR (Infineon Technologies)

DIODE SCHOTTKY 8V 150MW SOT343-4

0

BAR6406WE6327HTSA1

BAR6406WE6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SOT323-3

0

BAR 50-02V E6327

BAR 50-02V E6327

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SC79-2

0

BA 892 E6433

BA 892 E6433

IR (Infineon Technologies)

RF DIODE STANDARD 35V SCD80

0

BAT6804WE6327BTSA1

BAT6804WE6327BTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 8V 150MW SOT323-3

0

BAR 65-02V E6327

BAR 65-02V E6327

IR (Infineon Technologies)

RF DIODE PIN 30V 250MW SC79-2

0

BAT6207L4E6327XT

BAT6207L4E6327XT

IR (Infineon Technologies)

DIODE SCHOTTKY 40V 100MW TSLP-4

0

BAR66E6433HTMA1

BAR66E6433HTMA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SOT23-3

0

BAR6305WE6327HTSA1

BAR6305WE6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT323-3

0

BAT1705WE6327HTSA1

BAT1705WE6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 150MW SOT323-3

0

BA892H6433XTMA1

BA892H6433XTMA1

IR (Infineon Technologies)

RF DIODE STANDARD 35V SCD80

0

BAR 88-02LRH E6433

BAR 88-02LRH E6433

IR (Infineon Technologies)

RF DIODE PIN 80V 250MW TSLP-2

0

BAR5003WE6327HTSA1

BAR5003WE6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOD323-2

0

BAT6207WH6327XTSA1

BAT6207WH6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 40V 100MW SOT343

0

BA 892-02V E6127

BA 892-02V E6127

IR (Infineon Technologies)

RF DIODE STANDARD 35V SC79-2

0

BAT 63-02V E6327

BAT 63-02V E6327

IR (Infineon Technologies)

RF DIODE SCHOTTKY 3V 100MW SC79

0

BAR 63-03W E6433

BAR 63-03W E6433

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOD323-2

0

BAR 64-07 E6327

BAR 64-07 E6327

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SOT143-4

0

BAR 63-05 E6433

BAR 63-05 E6433

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT23-3

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top