Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAP70Q,125

BAP70Q,125

NXP Semiconductors

RF DIODE PIN 50V 125MW 5TSOP

0

BA277,115

BA277,115

NXP Semiconductors

MIXER DIODE, VERY HIGH FREQUENCY

0

BAP64-03,115

BAP64-03,115

NXP Semiconductors

RF DIODE PIN 175V 500MW SOD323

2313

BAP63-03,115

BAP63-03,115

NXP Semiconductors

BAP63-03 - PIN DIODE, 50V V(BR)

0

BAP51-05W,115

BAP51-05W,115

NXP Semiconductors

BAP51-05W - PIN DIODE, 50V

21000

BAP64-05W,115

BAP64-05W,115

NXP Semiconductors

DIODE PIN 100V 100MA SOT323

308306

BAP64LX,315

BAP64LX,315

NXP Semiconductors

DIODE SILICON PIN SOD-882T

2300

BAP70-02,115

BAP70-02,115

NXP Semiconductors

RF DIODE PIN 50V 415MW SOD523

6252

BAP64-06W,115

BAP64-06W,115

NXP Semiconductors

BAP64-06W - PIN DIODE, 100V

321122

BA278115

BA278115

NXP Semiconductors

DIODE BAND-SWITCHING 35V SOD523

9000

BAP50-04,215

BAP50-04,215

NXP Semiconductors

RF DIODE PIN 50V 250MW TO236AB

0

BAP63LX,315

BAP63LX,315

NXP Semiconductors

RF DIODE PIN 50V 135MW SOD2

0

BA278,115

BA278,115

NXP Semiconductors

DIODE STANDARD 35V 715MW SOD523

0

BAP1321-04,215

BAP1321-04,215

NXP Semiconductors

RF DIODE PIN 60V 250MW TO236AB

0

BAT18,235

BAT18,235

NXP Semiconductors

RF DIODE STANDARD 35V TO236AB

0

BYM359X-1500,127

BYM359X-1500,127

NXP Semiconductors

RF DIODE STANDARD 1500V TO220F

0

BAP1321LX,315

BAP1321LX,315

NXP Semiconductors

RF DIODE PIN 60V 130MW 2DFN

0

BAP63-02,115

BAP63-02,115

NXP Semiconductors

RF DIODE PIN 50V 715MW SOD523

0

BYM357X,127

BYM357X,127

NXP Semiconductors

DIODE STANDARD 1500V/600V TO220F

0

BYM358X,127

BYM358X,127

NXP Semiconductors

DIODE STANDARD 1500V/600V TO220F

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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