Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAP50-05,215

BAP50-05,215

NXP Semiconductors

RF DIODE PIN 50V 250MW TO236AB

4248

BAP65-05W,115

BAP65-05W,115

NXP Semiconductors

DIODE PIN 30V 100MA SOT323

68875

BAP64Q,125

BAP64Q,125

NXP Semiconductors

RF DIODE PIN 100V 125MW 5TSOP

0

BAP1321-03,115

BAP1321-03,115

NXP Semiconductors

BAP1321-03 - PIN DIODE

9189

BAP65-03,115

BAP65-03,115

NXP Semiconductors

RF DIODE PIN 30V 500MW SOD323

4479

BAP50-04W,115

BAP50-04W,115

NXP Semiconductors

RF DIODE PIN 50V 240MW SOT323-3

3031

BA277,335

BA277,335

NXP Semiconductors

DIODE BAND-SWITCHING 35V SOD523

0

BAP50-03,115

BAP50-03,115

NXP Semiconductors

RF DIODE PIN 50V 500MW SOD323

3353

BAP50-02,115

BAP50-02,115

NXP Semiconductors

PIN DIODE, 50V

0

BA891,115

BA891,115

NXP Semiconductors

DIODE STANDARD 35V 715MW SOD523

2690

BAT18,215

BAT18,215

NXP Semiconductors

RF DIODE STANDARD 35V TO236AB

3925

BAP51-04W,115

BAP51-04W,115

NXP Semiconductors

RF DIODE PIN 50V 240MW SOT323-3

0

BAP1321-02,115

BAP1321-02,115

NXP Semiconductors

DIODE PIN 60V 100MA SOD-523

65808

BAP51-03,115

BAP51-03,115

NXP Semiconductors

RF DIODE PIN 50V 500MW SOD323

18313

BAP70-05,215

BAP70-05,215

NXP Semiconductors

RF DIODE PIN 50V 250MW TO236AB

0

BA792,115

BA792,115

NXP Semiconductors

DIODE BAND-SWITCHING SOD110

504000

BAP65-05,215

BAP65-05,215

NXP Semiconductors

DIODE PIN 30V 100MA SOT-23

24000

BAP70AM,115

BAP70AM,115

NXP Semiconductors

BAP70AM - PIN DIODE

13456

BAP65LX,315

BAP65LX,315

NXP Semiconductors

RF DIODE PIN 30V 135MW SOD2

8915

BAP65-02,135

BAP65-02,135

NXP Semiconductors

RF DIODE PIN 30V 715MW SOD523

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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