Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
PMEG45U10EPDZ

PMEG45U10EPDZ

Nexperia

DIODE SCHOTTKY 45V 10A CFP15

6656

PMEG2010EJ,115

PMEG2010EJ,115

Nexperia

DIODE SCHOTTKY 20V 1A SOD323F

74142

BAS19,235

BAS19,235

Nexperia

DIODE GP 100V 200MA TO236AB

0

PMEG6010ETR,115

PMEG6010ETR,115

Nexperia

DIODE SCHOTTKY 60V 1A SOD123W

15690

BAL74,215

BAL74,215

Nexperia

DIODE GEN PURP 50V 215MA TO236AB

6236

PMEG4020ETR,115

PMEG4020ETR,115

Nexperia

DIODE SCHOTTKY 40V 2A SOD123W

13176

ES3DP115

ES3DP115

Nexperia

200V, 3A HYPERFAST PN-RECTIFIER

3000

BAS116H,115

BAS116H,115

Nexperia

DIODE GEN PURP 75V 215MA SOD123F

25585

PMEG10010ELRX

PMEG10010ELRX

Nexperia

DIODE SCHOTTKY 100V 1A SOD123

1107570

BAS40/ZL215

BAS40/ZL215

Nexperia

RECTIFIER DIODE, SCHOTTKY

0

PMEG60T20ELPX

PMEG60T20ELPX

Nexperia

DIODE SCHOTTKY 60V 2A CFP5

4568

PMEG100V100ELPDAZ

PMEG100V100ELPDAZ

Nexperia

DIODE SCHOTTKY 100V 10A CFP15

5000

BAS20,215

BAS20,215

Nexperia

DIODE GEN PURP 150V 200MA SOT23

2274

BAV20,143

BAV20,143

Nexperia

DIODE GEN PURP 150V 250MA ALF2

0

PMEG150G30ELPX

PMEG150G30ELPX

Nexperia

PMEG150G30ELP/SOD128/FLATPOWER

6000

BAS32L,115

BAS32L,115

Nexperia

DIODE GEN PURP 75V 200MA LLDS

18473

1PS76SB10,115

1PS76SB10,115

Nexperia

DIODE SCHOTTKY 30V 200MA SOD323

24558

PMEG060V050EPDAZ

PMEG060V050EPDAZ

Nexperia

RECTIFIER DIODE, SCHOTTKY, 1 PHA

8345

PMEG3010EJ,115

PMEG3010EJ,115

Nexperia

DIODE SCHOTTKY 30V 1A SOD323F

9468

PMEG045T100EPDZ

PMEG045T100EPDZ

Nexperia

DIODE SCHOTTKY 45V 14A CFP15

2195

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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