Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BAS21H,115

BAS21H,115

Nexperia

DIODE GP 200V 200MA SOD123F

6557

BAS21JF

BAS21JF

Nexperia

DIODE GEN PURP 300V 250MA SC90

0

PMEG4005CEAX

PMEG4005CEAX

Nexperia

PMEG4005CEA - 40 V, 0.5 A LOW VF

48000

PMEG2015EPK,315

PMEG2015EPK,315

Nexperia

DIODE SCHOT 20V 1.5A DFN1608D-2

400

BAS321/8F

BAS321/8F

Nexperia

DIODE GEN PURP 200V 250MA SOD323

0

PMEG100V080ELPDZ

PMEG100V080ELPDZ

Nexperia

DIODE SCHOTTKY 100V 8A CFP15

24511

BAT54W,135

BAT54W,135

Nexperia

DIODE SCHOTTKY 30V 200MA SC70

11615

PMBD6050,215

PMBD6050,215

Nexperia

DIODE GEN PURP 70V 215MA TO236AB

2602

PMEG4010CEGWX

PMEG4010CEGWX

Nexperia

DIODE SCHOTTKY 40V 1A SOD123

0

PMEG40T20ERX

PMEG40T20ERX

Nexperia

DIODE SCHOTTKY 40V 2A SOD123W

5889

PMEG3050EP,115

PMEG3050EP,115

Nexperia

DIODE SCHOTTKY 30V 5A SOD128

105680

BAS116GWJ

BAS116GWJ

Nexperia

DIODE GEN PURP 75V 215MA SOD123

830

PMEG6020EPAF

PMEG6020EPAF

Nexperia

DIODE SCHOTTKY 60V 2A 3HUSON

0

PMEG6020AELRX

PMEG6020AELRX

Nexperia

DIODE SCHOTTKY 60V 2A CFP3

32678

BAS516,135

BAS516,135

Nexperia

DIODE GEN PURP 100V 250MA SOD523

10142

PMEG4050EP,115

PMEG4050EP,115

Nexperia

DIODE SCHOTTKY 40V 5A CFP5

76702

PMEG2010EV,115

PMEG2010EV,115

Nexperia

DIODE SCHOTTKY 20V 1A SOT666

2961

PMEG3005AESFYL

PMEG3005AESFYL

Nexperia

DIODE SCHOTTKY 30V 0.5A SOD962

9138

PMEG4010CEH,115

PMEG4010CEH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

3302

PMEG2020EJ,115

PMEG2020EJ,115

Nexperia

DIODE SCHOTTKY 20V 2A SOD323F

16503

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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