Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
UPS5819E3TR7

UPS5819E3TR7

Microsemi

DIODE SCHOTTKY 40V 1A POWERMITE1

35586

JANTX1N6629

JANTX1N6629

Microsemi

DIODE GEN PURP 880V 1.4A

2

MC5616

MC5616

Microsemi

DIODE GEN PURP 3KV 570MA S AXIAL

6

HS24230

HS24230

Microsemi

DIODE SCHOTTKY 30V 240A HALFPAK

3

1N6629

1N6629

Microsemi

DIODE GEN PURP 880V 1.4A AXIAL

0

1N5811TR

1N5811TR

Microsemi

DIODE GEN PURP 150V 6A AXIAL

93

HS18140

HS18140

Microsemi

DIODE SCHOTTKY 40V 180A HALFPAK

6

APT10SCD120K

APT10SCD120K

Microsemi

DIODE SCHOTTKY 1.2KV 10A TO220

580

HU20260

HU20260

Microsemi

DIODE GEN PURP 600V 200A HALFPAK

3

JAN1N6629US

JAN1N6629US

Microsemi

DIODE GEN PURP 880V 1.4A D5B

0

JAN1N6629

JAN1N6629

Microsemi

DIODE GEN PURP 880V 1.4A AXIAL

0

CCR257

CCR257

Microsemi

CURRENT REGULATOR CHIP

0

1N6660DT1

1N6660DT1

Microsemi

RECTIFIER DIODE

0

APT30SCD65B

APT30SCD65B

Microsemi

DIODE SIC 650V 46A TO247

0

JANTX1N6629US

JANTX1N6629US

Microsemi

DIODE GEN PURP 880V 1.4A D5B

0

1N6660R

1N6660R

Microsemi

RECTIFIER DIODE

0

JANTXV1N6629US

JANTXV1N6629US

Microsemi

DIODE GEN PURP 800V 1.4A D5B

0

JANTXV1N6660

JANTXV1N6660

Microsemi

RECTIFIER

0

1N6660CCT1

1N6660CCT1

Microsemi

RECTIFIER DIODE

0

1N6660CAT1

1N6660CAT1

Microsemi

RECTIFIER DIODE

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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