Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JAN1N6623U

JAN1N6623U

Microsemi

DIODE GEN PURP 800V 1A A-MELF

0

JANTXV1N6625U

JANTXV1N6625U

Microsemi

DIODE GEN PURP 1KV 1A A-MELF

0

MS105/TR8

MS105/TR8

Microsemi

DIODE SCHOTTKY 50V 1A DO204AL

0

APT10SCD65K

APT10SCD65K

Microsemi

DIODE SILICON 650V 17A TO220

0

MS108/TR12

MS108/TR12

Microsemi

DIODE SCHOTTKY 80V 1A DO204AL

0

MS109/TR8

MS109/TR8

Microsemi

DIODE SCHOTTKY 90V 1A DO204AL

0

SK34E3/TR13

SK34E3/TR13

Microsemi

DIODE SCHOTTKY 40V 3A DO214AB

0

SK38E3/TR13

SK38E3/TR13

Microsemi

DIODE SCHOTTKY 80V 3A DO214AB

0

JAN1N6625U

JAN1N6625U

Microsemi

DIODE GEN PURP 1KV 1A A-MELF

0

HS247180

HS247180

Microsemi

DIODE SCHOTTKY 180V 240A HALFPAK

0

SK38BE3/TR13

SK38BE3/TR13

Microsemi

DIODE SCHOTTKY 80V 3A SMB

0

MS106/TR8

MS106/TR8

Microsemi

DIODE SCHOTTKY 60V 1A DO204AL

0

HS123100

HS123100

Microsemi

DIODE SCHOTTKY 100V 120A HALFPAK

0

SK18E3/TR13

SK18E3/TR13

Microsemi

DIODE SCHOTTKY 80V 1A DO214AA

0

MS109/TR12

MS109/TR12

Microsemi

DIODE SCHOTTKY 90V 1A DO204AL

0

MS110/TR8

MS110/TR8

Microsemi

DIODE SCHOTTKY 100V 1A DO204AL

0

JAN1N6621U

JAN1N6621U

Microsemi

DIODE GEN PURP 400V 1.2A A-MELF

0

LSM545J

LSM545J

Microsemi

DIODE SCHOTTKY 45V 5A DO214AB

0

SK310BE3/TR13

SK310BE3/TR13

Microsemi

DIODE SCHOTTKY 100V 3A SMB

0

SDM30004

SDM30004

Microsemi

DIODE GEN PURP 400V 300A MODULE

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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