Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
EC10QS10

EC10QS10

KYOCERA Corporation

DIODE SCHOTTKY 100V 1A DO-214AC

0

EP05Q06

EP05Q06

KYOCERA Corporation

DIODE SCHOTTKY 60V 0.5A SOD-123

0

NA05QSA065

NA05QSA065

KYOCERA Corporation

DIODE SCHOTTKY 65V 5A DO-221BC

0

NA05QSA035

NA05QSA035

KYOCERA Corporation

DIODE SCHOTTKY 35V 5A DO-221BC

0

FCF16A40

FCF16A40

KYOCERA Corporation

DIODE FAST RECOVERY 400V 16A TO-

0

NSQ03A03L

NSQ03A03L

KYOCERA Corporation

DIODE SCHOTTKY 30V 3A NSMC

0

NA05HSA065

NA05HSA065

KYOCERA Corporation

DIODE SCHOTTKY 65V 5A DO-221BC

0

EC31QS10

EC31QS10

KYOCERA Corporation

DIODE SCHOTTKY 100V 3A DO-214AC

0

NA03QSA045

NA03QSA045

KYOCERA Corporation

DIODE SCHOTTKY 45V 3A DO-221BC

0

NSF03B60

NSF03B60

KYOCERA Corporation

DIODE FAST RECOVERY 600V 3A NSMC

0

NSQ03A04

NSQ03A04

KYOCERA Corporation

DIODE SCHOTTKY 40V 3A NSMC

0

EP05Q04

EP05Q04

KYOCERA Corporation

DIODE SCHOTTKY 40V 0.5A SOD-123

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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