Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
EC21QS06

EC21QS06

KYOCERA Corporation

DIODE SCHOTTKY 60V 2A DO-214AC

0

EP05H10

EP05H10

KYOCERA Corporation

DIODE SCHOTTKY 100V 0.5A SOD-123

0

TCF20B60

TCF20B60

KYOCERA Corporation

DIODE FAST RECOVERY 600V 20A TO-

0

NSF03A20

NSF03A20

KYOCERA Corporation

DIODE FAST RECOVERY 200V 3A NSMC

0

EC21QS04

EC21QS04

KYOCERA Corporation

DIODE SCHOTTKY 40V 2A DO-214AC

0

EC10QS06

EC10QS06

KYOCERA Corporation

DIODE SCHOTTKY 60V 1A DO-214AC

0

NA05QSA045

NA05QSA045

KYOCERA Corporation

DIODE SCHOTTKY 45V 5A DO-221BC

0

EC10DA40

EC10DA40

KYOCERA Corporation

DIODE GENERAL PURPOSE 400V 1A DO

0

NA03HSA065

NA03HSA065

KYOCERA Corporation

DIODE SCHOTTKY 65V 3A DO-221BC

0

EC21QS10

EC21QS10

KYOCERA Corporation

DIODE SCHOTTKY 100V 2A DO-214AC

0

NSD03A40

NSD03A40

KYOCERA Corporation

DIODE GENERAL PURPOSE 400V 3A NS

0

NA05HSA12

NA05HSA12

KYOCERA Corporation

DIODE SCHOTTKY 120V 5A DO-221BC

0

EP05DA40

EP05DA40

KYOCERA Corporation

DIODE GENERAL PURPOSE 400V 0.5A

0

EC31QS03L

EC31QS03L

KYOCERA Corporation

DIODE SCHOTTKY 30V 3A DO-214AC

0

NA03QSA035

NA03QSA035

KYOCERA Corporation

DIODE SCHOTTKY 35V 3A DO-221BC

0

EC10QS04

EC10QS04

KYOCERA Corporation

DIODE SCHOTTKY 40V 1A DO-214AC

0

EP05FA20

EP05FA20

KYOCERA Corporation

DIODE FAST RECOVERY 200V 0.5A SO

0

TCF10B60

TCF10B60

KYOCERA Corporation

DIODE FAST RECOVERY 600V 10A TO-

0

NA03HA15

NA03HA15

KYOCERA Corporation

DIODE SCHOTTKY 150V 3A DO-221BC

0

NA03HSA12

NA03HSA12

KYOCERA Corporation

DIODE SCHOTTKY 120V 3A DO-221BC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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