Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
S16KR

S16KR

GeneSiC Semiconductor

DIODE GEN PURP 800V 16A DO220AA

0

S320Q

S320Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 320A DO205

0

MBR35100R

MBR35100R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V DO4

0

1N6098R

1N6098R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO5

0

FR12B02

FR12B02

GeneSiC Semiconductor

DIODE GEN PURP 100V 12A DO4

0

FR70MR05

FR70MR05

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 70A DO5

0

FR20BR02

FR20BR02

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 20A DO5

0

MBR60100R

MBR60100R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V DO5

0

FR70D02

FR70D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A DO5

0

FR40DR02

FR40DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 40A DO5

0

FR20G02

FR20G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 20A DO5

0

1N2135AR

1N2135AR

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 60A DO5

0

GKR130/12

GKR130/12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 165A DO205

0

FR12MR05

FR12MR05

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 12A DO4

0

MURH10010R

MURH10010R

GeneSiC Semiconductor

DIODE GEN PURP 100V 100A D-67

0

S70Q

S70Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 70A DO5

0

1N3208R

1N3208R

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 15A DO5

0

FR85BR02

FR85BR02

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 85A DO5

0

MBR6020

MBR6020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 60A DO5

0

GKN130/04

GKN130/04

GeneSiC Semiconductor

DIODE GEN PURP 400V 165A DO205AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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