Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FR12KR05

FR12KR05

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 12A DO4

0

S12KR

S12KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 12A DO4

0

1N2133A

1N2133A

GeneSiC Semiconductor

DIODE GEN PURP 300V 60A DO5

0

MBR3545

MBR3545

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 35A DO4

16

MBR3520R

MBR3520R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO4

0

FR12G02

FR12G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 12A DO4

0

FR20AR02

FR20AR02

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 20A DO5

0

MBR60100

MBR60100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 60A DO5

0

MBR7520R

MBR7520R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO5

0

MUR7040

MUR7040

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

0

S70YR

S70YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV 70A DO5

0

FR6A02

FR6A02

GeneSiC Semiconductor

DIODE GEN PURP 50V 6A DO4

540

S12JR

S12JR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

0

1N3213

1N3213

GeneSiC Semiconductor

DIODE GEN PURP 500V 15A DO5

0

FR40K05

FR40K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 40A DO5

0

150K80A

150K80A

GeneSiC Semiconductor

DIODE GEN PURP 800V 150A DO205AA

0

FR30MR05

FR30MR05

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 30A DO5

0

GKR240/08

GKR240/08

GeneSiC Semiconductor

DIODE GEN PURP 800V 320A DO205AB

0

S12DR

S12DR

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 12A DO4

0

1N5827R

1N5827R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO5

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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