Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
CD214B-S3M

CD214B-S3M

J.W. Miller / Bourns

DIO RECT

5000

CD2010-B160

CD2010-B160

J.W. Miller / Bourns

DIODE SCHOTTKY 60V 1A 2010

0

CD214C-FS3J

CD214C-FS3J

J.W. Miller / Bourns

DIO RECT VRRM 600V 3A SMC

0

CD1408-FF11000

CD1408-FF11000

J.W. Miller / Bourns

DIODE GEN PURP 1KV 1A 1408

7798

CD214B-B340R

CD214B-B340R

J.W. Miller / Bourns

DIO SBD VRRM 40V 3A SMB

0

CD214B-R250

CD214B-R250

J.W. Miller / Bourns

DIODE GEN PURP 50V 2A SMB

0

CD123D-B140R

CD123D-B140R

J.W. Miller / Bourns

DIODE SCHOTTKY 40V 1A SOD123

274

CD214B-S2M

CD214B-S2M

J.W. Miller / Bourns

DIO RECT

5000

CD214A-F1400

CD214A-F1400

J.W. Miller / Bourns

DIODE GEN PURP 400V 1A DO214AC

0

CD1607-B120LLF

CD1607-B120LLF

J.W. Miller / Bourns

DIODE SCHOTTKY 20V 1A 2MINISMA

0

CD214A-B120R

CD214A-B120R

J.W. Miller / Bourns

DIO SBD VRRM 20V 1A SMA

0

CD214B-B240R

CD214B-B240R

J.W. Miller / Bourns

DIO SBD VRRM 40V 2A SMB

0

CD214C-B360R

CD214C-B360R

J.W. Miller / Bourns

DIO SBD VRRM 60V 3A SMC

0

CD214A-RS1J

CD214A-RS1J

J.W. Miller / Bourns

DIO RECT

3000

CD1206-B2100

CD1206-B2100

J.W. Miller / Bourns

DIODE SCHOTTKY 100V 2A 1206

12462

CD1408-FU1200

CD1408-FU1200

J.W. Miller / Bourns

DIODE GEN PURP 200V 1A 1408

11940

CD214B-FS3K

CD214B-FS3K

J.W. Miller / Bourns

DIO RECT VRRM 800V 3A SMB

0

CD1408-FF1800

CD1408-FF1800

J.W. Miller / Bourns

DIODE GEN PURP 800V 1A 1408

0

CD214A-F1150

CD214A-F1150

J.W. Miller / Bourns

DIODE GEN PURP 150V 1A DO214AC

0

CD214A-B220LR

CD214A-B220LR

J.W. Miller / Bourns

DIO SBD VRRM 20V 2A SMA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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