Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
CD214B-FS3D

CD214B-FS3D

J.W. Miller / Bourns

DIO RECT VRRM 200V 3A SMB

0

CD214A-R11000

CD214A-R11000

J.W. Miller / Bourns

DIODE GEN PURP 1KV 1A DO214AC

0

CD214A-R1800

CD214A-R1800

J.W. Miller / Bourns

DIODE GEN PURP 800V 1A SMAJ

0

CD214A-B360R

CD214A-B360R

J.W. Miller / Bourns

DIO SBD VRRM 60V 3A SMA

1318

CD214C-B3100R

CD214C-B3100R

J.W. Miller / Bourns

DIO SBD VRRM 100V 3A SMC

0

CD214B-R2200

CD214B-R2200

J.W. Miller / Bourns

DIODE GEN PURP 200V 2A SMB

0

CD1408-F11000

CD1408-F11000

J.W. Miller / Bourns

DIODE GEN PURP 1KV 1A 1408

0

CD214C-B320R

CD214C-B320R

J.W. Miller / Bourns

DIO SBD VRRM 20V 3A SMC

0

CD1408-FF1200

CD1408-FF1200

J.W. Miller / Bourns

DIODE GEN PURP 200V 1A 1408

0

CD214A-F1100

CD214A-F1100

J.W. Miller / Bourns

DIODE GEN PURP 100V 1A DO214AC

0

CD214B-R2400

CD214B-R2400

J.W. Miller / Bourns

DIODE GEN PURP 400V 2A SMB

0

CD214B-R21000

CD214B-R21000

J.W. Miller / Bourns

DIODE GEN PURP 1KV 2A SMB

0

CD214B-FS3J

CD214B-FS3J

J.W. Miller / Bourns

DIO RECT VRRM 600V 3A SMB

0

CD1408-FF11500

CD1408-FF11500

J.W. Miller / Bourns

DIODE GEN PURP 1.5KV 1A 1408

6000

CD214A-R12000

CD214A-R12000

J.W. Miller / Bourns

DIODE GEN PURP 2KV 1A SMA

1397

CD214A-R1200

CD214A-R1200

J.W. Miller / Bourns

DIODE GEN PURP 200V 1A DO214AC

0

CD214A-B240R

CD214A-B240R

J.W. Miller / Bourns

DIO SBD VRRM 40V 2A SMA

9890

CD214B-S2D

CD214B-S2D

J.W. Miller / Bourns

DIO RECT

5000

CD214C-S3D

CD214C-S3D

J.W. Miller / Bourns

DIO RECT VRRM 200V 3A SMC

0

CD1408-F1200

CD1408-F1200

J.W. Miller / Bourns

DIODE GEN PURP 200V 1A 1408

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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