Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
2A05G R0G

2A05G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 2A DO204AC

0

SR305HA0G

SR305HA0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 3A DO201AD

0

SS36L RQG

SS36L RQG

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 60V 3A SUB SMA

0

TSDGLWHRVG

TSDGLWHRVG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1A SOD123W

0

MUR440HB0G

MUR440HB0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 4A DO201AD

0

ES3D R7G

ES3D R7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 3A DO214AB

0

S1GLSHRQG

S1GLSHRQG

TSC (Taiwan Semiconductor)

DIODE, 1.2A, 400V, AEC-Q101, SOD

0

ES1ALHRQG

ES1ALHRQG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A SUB SMA

0

RS1G R3G

RS1G R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1A DO214AC

1800

RS1J M2G

RS1J M2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1A DO214AC

0

SR506HR0G

SR506HR0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 60V 5A DO201AD

0

SR804 B0G

SR804 B0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 8A DO201AD

0

S1B M2G

S1B M2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1A DO214AC

0

RSFBL RVG

RSFBL RVG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 500MA SUBSMA

4273

SF24G A0G

SF24G A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 2A DO204AC

170

ES1BHM2G

ES1BHM2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1A DO214AC

0

SK35B M4G

SK35B M4G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 3A DO214AA

0

LL4003G L0G

LL4003G L0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A MELF

0

TSP15H120S S1G

TSP15H120S S1G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 120V 15A TO277A

839

S2GFS M3G

S2GFS M3G

TSC (Taiwan Semiconductor)

2A, 400V, STANDARD RECOVERY RECT

7000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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