Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SS26 R5G

SS26 R5G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 60V 2A DO214AA

2639

MUR110SHM4G

MUR110SHM4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1A DO214AA

0

ES3DV M6G

ES3DV M6G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 3A DO214AB

0

HER301G A0G

HER301G A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 3A DO201AD

0

RS2KAHR3G

RS2KAHR3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 1.5A DO214AC

0

SK110B R5G

SK110B R5G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 100V 1A DO214AA

4110

SF12G B0G

SF12G B0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1A DO204AL

0

FR306G R0G

FR306G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 3A DO201AD

0

ES15DLWHRQG

ES15DLWHRQG

TSC (Taiwan Semiconductor)

DIODE, SUPER FAST

0

ES3GBHM4G

ES3GBHM4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 3A DO214AA

0

S1AL RVG

S1AL RVG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A SUB SMA

1646

S12MC V6G

S12MC V6G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 12A DO214AB

0

RS2A M4G

RS2A M4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 2A DO214AA

0

MUR460SHR7G

MUR460SHR7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 4A DO214AB

2

HER105G R0G

HER105G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1A DO204AL

0

SR105HR0G

SR105HR0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 1A DO204AL

0

SS210L RQG

SS210L RQG

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 100V 2A SUB SMA

0

MUR360SHR7G

MUR360SHR7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 3A DO214AB

0

SK34B R5G

SK34B R5G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 3A DO214AA

663

SK29AHR3G

SK29AHR3G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 90V 2A DO214AC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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