Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BYT12PI-1000RG

BYT12PI-1000RG

STMicroelectronics

DIODE GEN PURP 1KV 12A TO220AC

0

STTH30R06P

STTH30R06P

STMicroelectronics

DIODE GEN PURP 600V 30A SOD93-2

0

SPV1001N30

SPV1001N30

STMicroelectronics

DIODE GEN PURP 30V 12.5A 8PQFN

0

BYT12PI-1000

BYT12PI-1000

STMicroelectronics

DIODE GEN PURP 1KV 12A TO220AC

0

SPV1540N

SPV1540N

STMicroelectronics

DIODE SCHOTTKY 12V 16A 8VFQFPN

0

STTH20P035FP

STTH20P035FP

STMicroelectronics

DIODE GEN PURP 350V 20A TO220FP

0

BAT30F3

BAT30F3

STMicroelectronics

DIODE SCHOTTKY 20V 2FLIPCHIP

0

BYT30P-400

BYT30P-400

STMicroelectronics

DIODE GEN PURP 400V 30A SOD93-2

0

STTH12R06D

STTH12R06D

STMicroelectronics

DIODE GEN PURP 600V 12A TO220AC

0

BYW77P-200

BYW77P-200

STMicroelectronics

DIODE GEN PURP 200V 25A SOD93-2

0

SPV1001N40

SPV1001N40

STMicroelectronics

DIODE GEN PURP 40V 12.5A 8PQFN

0

SPV1512N

SPV1512N

STMicroelectronics

DIODE SCHOTTKY 12V 16A 8VFQFPN

0

STTH30L06P

STTH30L06P

STMicroelectronics

DIODE GEN PURP 600V 30A SOD93-2

0

BYT30P-1000

BYT30P-1000

STMicroelectronics

DIODE GEN PURP 1KV 30A SOD93-2

0

STTH30AC06SP

STTH30AC06SP

STMicroelectronics

DIODE GEN PURP 600V 30A TO-3P

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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