Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
STTH1210FP

STTH1210FP

STMicroelectronics

DIODE GEN PURP 1KV 12A TO220FP

0

STTH1R04

STTH1R04

STMicroelectronics

DIODE GEN PURP 400V 1A DO41

0

BYW81P-200

BYW81P-200

STMicroelectronics

DIODE GEN PURP 200V 15A TO220AC

0

STPS1645D

STPS1645D

STMicroelectronics

DIODE SCHOTTKY 45V 16A TO220AC

0

STTH8R06G

STTH8R06G

STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

0

STTH3002G

STTH3002G

STMicroelectronics

DIODE GEN PURP 200V 30A D2PAK

0

STTH812G

STTH812G

STMicroelectronics

DIODE GEN PURP 1.2KV 8A D2PAK

0

STTA812D

STTA812D

STMicroelectronics

DIODE GEN PURP 1.2KV 8A TO220AC

0

STTH4R02B

STTH4R02B

STMicroelectronics

DIODE GEN PURP 200V 4A DPAK

0

STTA512F

STTA512F

STMicroelectronics

DIODE GP 1.2KV 5A ISOWATT-220AC

0

STTH4R02

STTH4R02

STMicroelectronics

DIODE GEN PURP 200V 4A DO201AB

0

STTH806G

STTH806G

STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

0

STPR120A

STPR120A

STMicroelectronics

DIODE GEN PURP 200V 1A SMA

0

STTH5BCF060

STTH5BCF060

STMicroelectronics

DIODE GEN PURP 600V 5A DO201AD

0

STPS20SM60SG-TR

STPS20SM60SG-TR

STMicroelectronics

DIODE SCHOTTKY 60V 20A D2PAK

0

STTH15L06G

STTH15L06G

STMicroelectronics

DIODE GEN PURP 600V 20A D2PAK

0

DTV1500SDFP

DTV1500SDFP

STMicroelectronics

DIODE GEN PURP 1.5KV 6A TO220FP

0

BYW77PI-200RG

BYW77PI-200RG

STMicroelectronics

DIODE GEN PURP 200V 25A DOP3I

0

STTA1212D

STTA1212D

STMicroelectronics

DIODE GEN PURP 1.2KV 12A TO220AC

0

STTH212RL

STTH212RL

STMicroelectronics

DIODE GEN PURP 1.2KV 2A DO201AD

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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