Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MR752

MR752

Solid State Inc.

RECT 200 V 6 AMPS

4980

1N5312

1N5312

Solid State Inc.

FED 3.9 MA DO35

940

MR754

MR754

Solid State Inc.

RECT 400 V 6 AMPS

2000

1N5811

1N5811

Solid State Inc.

G 4 6 AMP SILICON RECTIFIER

4600

1N5551

1N5551

Solid State Inc.

RECT 3AMP 400V G4

5000

1N5288

1N5288

Solid State Inc.

FED .39 MA DO35

1000

1N5305

1N5305

Solid State Inc.

FED 1.2 MA DO35

940

MR751

MR751

Solid State Inc.

RECT 100 V 6 AMPS

4900

1N5287

1N5287

Solid State Inc.

FED .33 MA DO35

990

1N5284

1N5284

Solid State Inc.

FED .24 MA DO35

980

1N5806

1N5806

Solid State Inc.

DO-204AP 2.5 AMP RECTIFIER

4950

40HF60

40HF60

Solid State Inc.

REC 40AMP 600V DO5

150

1N5285

1N5285

Solid State Inc.

FED .27 MA DO35

1000

1N5553

1N5553

Solid State Inc.

RECT 3AMP 800V G4

4900

1N5306

1N5306

Solid State Inc.

FED 2 MA DO35

900

300U60A

300U60A

Solid State Inc.

RECT 300 AMP 600V DO9

440

1N1188A

1N1188A

Solid State Inc.

NPN SIL TRANS TO3

450

150K60A

150K60A

Solid State Inc.

RECT 150 AMP 600 V DO8

2990

MR750

MR750

Solid State Inc.

RECT 50 V 6 AMPS

4980

1N5295

1N5295

Solid State Inc.

FED .82 MA DO35

1000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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