Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MR756

MR756

Solid State Inc.

RECT 600 V 6 AMPS

4940

1N5298

1N5298

Solid State Inc.

FED 1.1 MA DO35

1000

MR760

MR760

Solid State Inc.

RECT 1000 V 6 AMPS

4150

1N645

1N645

Solid State Inc.

DIODE 4 AMP 225V DO35

450

1N5308

1N5308

Solid State Inc.

FED 2.7 MA DO35

1000

40HF40

40HF40

Solid State Inc.

REC 40AMP 400V DO5

490

1N270

1N270

Solid State Inc.

DO 7 GOLD GERM. DIODE 100V

2760

A114B

A114B

Solid State Inc.

1 AMP RECT 200 V DO 204

1000

1N6662

1N6662

Solid State Inc.

RECT , .5AMP 400V DO7

500

16F120

16F120

Solid State Inc.

RECT , 16 AMP 1200V KK DO4

500

1N5307

1N5307

Solid State Inc.

FED 2.4 MA DO35

990

1N5289

1N5289

Solid State Inc.

FED .43 MA DO35

990

UES803

UES803

Solid State Inc.

REC , UFR 700A 150V KK DO5

500

1N5314

1N5314

Solid State Inc.

FED 4.7 MA DO35

50

1N5290

1N5290

Solid State Inc.

FED .47 MA DO35

790

1N5309

1N5309

Solid State Inc.

FED 3 MA DO35

500

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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