Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SJPD-L5

SJPD-L5

Sanken Electric Co., Ltd.

DIODE GEN PURP 500V 3A SJP

0

SJPA-L3V

SJPA-L3V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 30V 3A SJP

0

SJPJ-D3VR

SJPJ-D3VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 30V 1A SJP

1688

RU 3AMV1

RU 3AMV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1.5A AXIAL

740

FMG-G2CS

FMG-G2CS

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 3A TO220F

1440

SJPX-F2V

SJPX-F2V

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1.5A SJP

0

RK 14V1

RK 14V1

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 1.7A AXIAL

209

SJPM-H4V

SJPM-H4V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 2A SJP

0

SJPL-H6VL

SJPL-H6VL

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 2A SJP

6798

SJPL-F4

SJPL-F4

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.5A SJP

0

SJPB-D6V

SJPB-D6V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 1A SJP

0

SJPB-D9V

SJPB-D9V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 1A SJP

0

AU01AV1

AU01AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 500MA AXIAL

0

SJPM-H4VL

SJPM-H4VL

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 2A 2SMD

0

EL02ZW

EL02ZW

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1.5A AXIAL

0

EU01V

EU01V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 250MA AXIAL

0

RM 1ZV1

RM 1ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

RP 3FV3

RP 3FV3

Sanken Electric Co., Ltd.

DIODE GEN PURP 1.5KV 2A AXIAL

0

RM 11AV1

RM 11AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1.2A AXIAL

0

EG 1AV

EG 1AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 600MA AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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