Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SARS01

SARS01

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

6701

SJPB-H4VR

SJPB-H4VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 2A SJP

4455

SARS02V1

SARS02V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

5

SJPB-L6V

SJPB-L6V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 3A SJP

0

SJPX-H3

SJPX-H3

Sanken Electric Co., Ltd.

DIODE GEN PURP 300V 2A SJP

0

SJPL-D2V

SJPL-D2V

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A SJP

0

FMX-1106S

FMX-1106S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 10A TO220F

242

SJPB-D9VL

SJPB-D9VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 1A SJP

413

RU 2CV1

RU 2CV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 800MA AXIAL

5771

FMN-G12S

FMN-G12S

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 5A TO220F-2L

466

FMU-G16S

FMU-G16S

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 5A TO220F-2L

482

EK 16V1

EK 16V1

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 1.5A AXIAL

1848

SJPX-H6

SJPX-H6

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 2A SJP

0

FMB-G24H

FMB-G24H

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 10A TO220F-2L

2929

SJPB-D6VR

SJPB-D6VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 1A SJP

4559

SJPL-H2VL

SJPL-H2VL

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 2A SJP

23369

SJPB-H4V

SJPB-H4V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 2A SJP

0

SJPB-D4V

SJPB-D4V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 1A SJP

0

EM01AV1

EM01AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

1621

EK 19V1

EK 19V1

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 1.5A AXIAL

1

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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